Optical thin film with excellent performances
An optical thin film and thin film technology, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve problems such as obstacles to the practical application of cubic boron nitride optical thin films, so as to avoid bursting and peeling, reduce differences, Effect of improving density and binding force
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0015] First, single crystal silicon (100) is selected as the base material, washed with acetone in ultrasonic for 10 minutes and then dried with argon for use.
[0016] Subsequently, the substrate is placed on the sample stage of the vacuum chamber of the radio frequency magnetron sputtering, and the sintered hexagonal BN target is placed at the target position, and the sintered hexagonal BN target is added with 3% of the total atomic amount of Si.
[0017] Then the vacuum degree in the vacuum chamber is pumped to ≤5×10 -4 Pa, while introducing pure Ar with a flow rate of 300sccm, when the vacuum chamber pressure is 2Pa, pre-sputtering for 5 minutes, the pre-sputtering power is 150W, the substrate bias is 500V, and the substrate temperature is 430℃ to further remove the substrate surface The impurities and activate the surface atomic activity.
[0018] Then began to pass in N with a flow rate of 8sccm 2 , And reduce the flow of Ar to 32sccm, the pressure of the vacuum chamber to 0.9...
Embodiment 2
[0022] As in Example 1, single crystal silicon (100) was selected as the base material, washed with acetone in ultrasonic for 10 minutes and then dried with argon for use.
[0023] Subsequently, the substrate is placed on the sample stage of the vacuum chamber of radio frequency magnetron sputtering, and the sintered hexagonal BN target is placed at the target position, and the sintered hexagonal BN target is added with 5% of the total atomic amount of Si.
[0024] Then the vacuum degree in the vacuum chamber is pumped to ≤5×10 -4 Pa, while introducing pure Ar with a flow rate of 330sccm, when the vacuum chamber pressure is 2.5Pa, pre-sputtering for 8min, the pre-sputtering power is 170W, the substrate bias is 550V, and the substrate temperature is 450℃ to further remove the substrate Impurities on the surface activate surface atomic activity.
[0025] Then began to pass in N with a flow rate of 10sccm 2 , And reduce the flow of Ar to 30sccm, the pressure of the vacuum chamber to 1Pa...
Embodiment 3
[0029] As in Example 1, single crystal silicon (100) was selected as the base material, washed with acetone in ultrasonic for 10 minutes and then dried with argon for use.
[0030] Subsequently, the substrate is placed on the sample stage of the vacuum chamber of radio frequency magnetron sputtering, and the sintered hexagonal BN target is placed at the target position, and the sintered hexagonal BN target is added with 7% of the total atomic amount of Si.
[0031] Then the vacuum degree in the vacuum chamber is pumped to ≤5×10 -4 Pa, while introducing pure Ar with a flow rate of 350sccm, when the vacuum chamber pressure is 3Pa, pre-sputtering for 10 minutes, the pre-sputtering power is 200W, the substrate bias is 600V, and the substrate temperature is 470℃ to further remove the substrate surface The impurities and activate the surface atomic activity.
[0032] Then began to pass N with a flow rate of 12sccm 2 , And reduce the flow of Ar to 28sccm, the pressure of the vacuum chamber ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| hardness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| hardness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More