Process for photoetching polyimide on semiconductor substrate

Abstract

The invention provides a process for photoetching polyimide on a semiconductor substrate. A one-step dry method for glue removal is added after a wet method for glue removal is performed; plasma gas can thoroughly remove residual byproducts from the surface of a passivation layer, so that a good effect that a polyimide residue is eliminated after development is performed by using a polyimide photoetching process is achieved; and therefore, an aim of zero reworking of a product in the step is fulfilled, the production time of the product is reduced, and the manufacturing cost is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing technology, in particular to a semiconductor substrate processing technology. Background technique [0002] Polyimide (Polyimide, PI) is a kind of polymer material, which has the characteristics of high temperature resistance, radiation resistance, good insulation performance, corrosion resistance and stable chemical properties. material, but due to its special chemical properties, it has relatively high requirements for the cleanliness of the surface of the object. [0003] Such as figure 1 As shown, the existing silicon wafer pretreatment process is generally as follows: firstly, the passivation layer is etched on the silicon wafer; then, dry stripping and EKC wet stripping are performed in sequence, and then the polyimide photolithography process is performed. . [0004] Such as figure 2 As shown, in the existing silicon wafer pretreatment process, af...

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Problems solved by technology

[0004] like figure 2 As shown, in the existing silicon wafer pretreatment process, after EKC wet stripping, the photoresist and other polymers on the surface of the passivation layer are not completely removed. Therefore, there is often a residue on the surface of the passivation layer A by-product that cannot be seen by visual inspection, this by-product will react with the polyimide in the subsequent polyimide lithography process to produce polyimide residues that cannot be dissolved by the developer 101, resulting in silicon Chip Rework or Scrap

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