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Substrate integrated waveguide magic T

A substrate-integrated waveguide and substrate waveguide technology, applied in waveguide devices, electrical components, connection devices, etc., can solve problems affecting performance, difficult design of E-plane joints, discontinuity mismatch at joint connections, etc., to achieve Facilitate tuning, volume reduction, and high isolation effects

Inactive Publication Date: 2012-07-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the substrate-integrated waveguide structure, the E-plane connector is not easy to design, and the discontinuity of the connector connection produces mismatch, which affects the performance. Therefore, the realization of the E-T connector and the impedance matching of the connection have become the SIW magic T realization. core issue of

Method used

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Experimental program
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specific Embodiment approach 1

[0029] A substrate-integrated waveguide magic T is composed of upper and lower layers of E-T, H-T branches and matching components, and its structural parameters are as follows:

[0030]

[0031] The substrate integrated waveguide magic T can be obtained by the steps of realization, and the dielectric substrate material is Duroid(tm) (relative permittivity ε r =2.2, loss tangent tanδ=0.0009). At the frequency of 30GHz to 31.3GHz, the return loss of the four ports is better than -20dB; the isolation of ports 2 and 3 is better than -25dB, and the isolation of ports 1 and 4 is better than -37dB; the amplitude imbalance of the non-inverting and anti-phase outputs Both are less than 0.19dB, and the phase imbalance is less than 0.5°.

specific Embodiment approach 2

[0032] A substrate-integrated waveguide magic T is composed of upper and lower layers of E-T, H-T branches and matching components, and its structural parameters are as follows:

[0033]

[0034] The substrate integrated waveguide magic T can be obtained by the steps of realization, and the dielectric substrate material is Duroid(tm) (relative permittivity ε r =2.2, loss tangent tanδ=0.0009). At the frequency of 30GHz to 31.3GHz, the return loss of the four ports is better than -15dB; the isolation of ports 2 and 3 is better than -22dB, and the isolation of ports 1 and 4 is better than -37dB; the amplitude imbalance between the non-inverting and inverting outputs Both are less than 0.18dB, and the phase imbalance is less than 0.6°. Its effect is not as good as that of Embodiment 1, because as the length of the coupling gap decreases, the resonance frequency increases, which shifts the resonance point to a high frequency.

specific Embodiment approach 3

[0035] A substrate-integrated waveguide magic T is composed of upper and lower layers of E-T, H-T branches and matching components, and its structural parameters are as follows:

[0036]

[0037]

[0038] The substrate integrated waveguide magic T can be obtained by the steps of realization, and the dielectric substrate material is Duroid (tm) (relative permittivity ε r =2.2, loss tangent tanδ=0.0009). In the frequency range of 30GHz to 31.3GHz, the return loss of the four ports is better than -13dB; the isolation of ports 2 and 3 is better than -18dB, and the isolation of ports 1 and 4 is better than -40dB; Both are less than 0.15dB, and the phase imbalance is less than 0.8°. Its effect is far inferior to that of Embodiment 1, especially the reflection of port 4 is relatively large, and the performance of the port is poor. The reason for this phenomenon is that after the position of the coupling slit deviates, the cutting surface current weakens, so that the coupled e...

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Abstract

The invention relates to a substrate integrated wavelength magic T, belonging to the technical field of microwave devices. The substrate integrated wavelength magic T comprises an upper substrate and a lower substrate which are provided with coupling slots and have waveguide structures, wherein the lower substrate is provided with an H-T branch of the magic T; the upper substrate realizes an E-T branch through the coupling slot; the upper substrate and the lower substrate are overlapped in parallel; each waveguide structure is formed by through holes on each substrate; the horizontal edge of the waveguide of the upper substrate is parallel to the horizontal edge of the waveguide of the lower substrate; and the vertical edge of the waveguide of the upper substrate is parallel to the vertical edge of the waveguide of the lower substrate. According to the substrate integrated wavelength magic T, a substrate integrated waveguide theory is adopted, so that the volume of the magic T is greatly reduced; and more particularly, the height of the substrate integrated wavelength magic T is only equal to the thickness of two layers of dielectric plates, thus the substrate integrated wavelength magic T is easy to be integrated with a microstrip line and other circuits.

Description

technical field [0001] The invention belongs to the technical field of microwave devices, and in particular relates to the design and manufacturing technology of a planar integrated waveguide magic T. Background technique [0002] As a commonly used microwave bridge, the magic T plays an irreplaceable role in microwave circuit design. It can be widely used in E-H adapters, impedance measurements, duplexers, and sum-difference networks required by radar systems. For the traditional waveguide magic T, it is realized through the combination of ET and HT connectors on the common symmetrical plane. It has the advantages of high power capacity and good port characteristics, but it has the disadvantages of large size and difficult tuning. [0003] With the development of modern microwave circuits, the miniaturization and integration of devices is very necessary, so a planar integrated waveguide technology - substrate integrated waveguide (SIW) is proposed. It is realized by using...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/20
Inventor 汪晓光汪蔚陈良邓龙江梁迪飞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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