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Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves

A deep etching, laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problem of device wavelength deviation from the design wavelength, etc., and achieve the effect of narrow laser line width, less energy loss, and small manufacturing error.

Active Publication Date: 2013-03-13
SONT TECH (SHEN ZHEN) LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still two problems with this structure: 1. Most of the energy in the laser cavity is concentrated in the quantum well layer, and the shallow etching groove is just etched to the quantum well layer. When the light passes through this interface, there will be A large part of the energy hits the acute angle at the bottom of the groove, and then scatters out of the resonant cavity, introducing additional loss into the cavity; 2. This device uses the cleavage surface as the reflection surface, and the error in actual operation is generally at least about 10um, which eventually leads to The actual device wavelength deviates greatly from the design wavelength

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  • Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves
  • Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves
  • Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves

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Embodiment Construction

[0028] Figure 4 It is an embodiment of the present invention, and its structure includes a laser waveguide 11, a first deeply etched reflective surface 21, a second deeply etched reflective surface 22 located at both ends of the laser waveguide 11, and a deeply etched groove array 31 distributed therebetween.

[0029] The deep etched groove array 31, the first deeply etched reflective surface 21 and the second deeply etched reflective surface 22 are the key structures of the present invention, wherein the deeply etched groove array 31 includes the first deeply etched groove 301, the second deeply etched groove 302 and the clip 0~4 deeply etched grooves between them. The above-mentioned structures are all fabricated by ICP deep etching process, and the sidewalls are required to be smooth and vertical and the etching depth exceeds the quantum well layer 5 to ensure sufficient feedback and ensure that most of the energy in the cavity propagates in the direction of the horizontal...

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Abstract

The invention discloses a multi-section-type (FabryPerot) cavity single wavelength laser based on deeply etched grooves. The laser disclosed by the invention is structurally characterized by at least comprising a laser waveguide, a first deeply etched reflecting surface and a second deeply etched reflecting surface which are respectively positioned at two ends of the laser waveguide, and a deeply etched groove array arranged between the first deeply etched reflecting surface and the second deeply etched reflecting surface, wherein the deeply etched groove array is composed of 2-6 deeply etched grooves; the laser is manufactured on a semiconductor epitaxial wafer, and respectively comprises a lower cladding layer, a quantum well layer, an upper cladding layer and certain auxiliary layers among the lower cladding layer, the quantum well layer, the upper cladding layer layers from bottom to top; and the laser waveguide is divided into a plurality of sections of independent waveguides by the deeply etched groove array, the first deeply etched reflecting surface and the second deeply etched reflecting surface, each section of waveguide is covered with an electrode, and each electrode is respectively injected with a current so as to control the laser wavelength and power. Compared with the background technology, the laser disclosed by the invention has the advantages that the production process is simpler and cheaper due to only once epitaxial growth, the manufacturing error is smaller, the energy consumption for the apparatus operation is less, and the laser line width is narrower.

Description

technical field [0001] The invention relates to a multi-segment FP cavity single-wavelength laser, in particular to a multi-segment FP cavity single-wavelength laser based on deep etched grooves. Background technique [0002] In the 1970s, major breakthroughs were made in optical fibers and lasers. Over the past few decades, through the efforts of R&D personnel from various countries, optical fiber communication systems have been updated many times. Especially since the early 1990s, as human society has entered an era of explosive and rapid growth in the amount of information exchange, optical fiber communication technology has been widely used in the communication field due to its huge broadband potential and unparalleled transmission performance. Especially in the long-distance large-capacity communication occupies an irreplaceable important position. [0003] Wavelength-division multiplexing (WDM) is a technology commonly used in large-capacity optical fiber communicatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/125H01S5/34
Inventor 王磊王寅杨友光何建军
Owner SONT TECH (SHEN ZHEN) LTD