Large area deposition of graphene hetero-epitaxial growth, and products including the same

Abstract

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms / square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Description

technical field [0001] Some examples of embodiments of the invention relate to thin films comprising graphene. In particular, certain example embodiments of the present invention relate to the use of graphene as a transparent conductive coating (TCC). In certain embodiment examples, on the catalyst film from hydrocarbon gas (hydrocarbon gas) (for example like C 2 h 2 、CH 4 or similar) large-area heteroepitaxial growth of graphene films. Graphene films in certain example embodiments may be doped or undoped. In certain example embodiments, the graphene film, once formed, can be peeled off its carrier substrate to be transferred to a receiving substrate, eg, it can be incorporated into an intermediate or finished product. Background technique [0002] Indium tin oxide (ITO) and fluorine-doped tin oxide (FTO or SnO:F) coatings are widely used in window electrodes of optoelectronic devices. These transparent conducting oxides (TCOs) have been very successful in a variety of...

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Problems solved by technology

Materials so prepared are often contaminated with additives, which degrade the level of their electronic properties

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