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Large area deposition of graphene hetero-epitaxial growth, and products including the same

一种异质外延、石墨烯的技术，应用在石墨烯、晶体生长、单晶生长等方向，能够解决降低电子特性等级、材料添加物污染等问题

Inactive Publication Date: 2012-07-04
GUARDIAN IND CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Materials so prepared are often contaminated with additives, which degrade the level of their electronic properties

Method used

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  • Large area deposition of graphene hetero-epitaxial growth, and products including the same
  • Large area deposition of graphene hetero-epitaxial growth, and products including the same
  • Large area deposition of graphene hetero-epitaxial growth, and products including the same

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Embodiment Construction

[0031] Certain exemplary embodiments of the present invention relate to heteroepitaxially grown single crystal graphite (n about 15) and extended techniques for its conversion to high electron grade (HEG) graphene (n<about 3). Certain example embodiments also relate to the use of HEG graphene in transparent (in the visible and infrared spectral range), ultra-thin conductive graphene films, e.g., for more general applicability for various applications including, e.g., solid-state solar cells Alternatives to metal oxide window electrodes. The growth technique illustrated by certain embodiments is based on a catalytically driven heteroepitaxial CVD process that generates temperatures low enough to be non-destructive to the glass. For example, according to the principles of thermodynamics and kinetics, HEG graphene films can be crystallized from the gas phase in a seed catalyst layer at a temperature of, for example, lower than about 600°C.

[0032] figure 1 A high-level flowcha...

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Abstract

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms / square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Description

technical field [0001] Some examples of embodiments of the invention relate to thin films comprising graphene. In particular, certain example embodiments of the present invention relate to the use of graphene as a transparent conductive coating (TCC). In certain embodiment examples, on the catalyst film from hydrocarbon gas (hydrocarbon gas) (for example like C 2 h 2 、CH 4 or similar) large-area heteroepitaxial growth of graphene films. Graphene films in certain example embodiments may be doped or undoped. In certain example embodiments, the graphene film, once formed, can be peeled off its carrier substrate to be transferred to a receiving substrate, eg, it can be incorporated into an intermediate or finished product. Background technique [0002] Indium tin oxide (ITO) and fluorine-doped tin oxide (FTO or SnO:F) coatings are widely used in window electrodes of optoelectronic devices. These transparent conducting oxides (TCOs) have been very successful in a variety of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B25/10C30B29/02C30B25/02
CPCC01B31/0453C30B25/18C30B25/02C30B25/105C30B29/02B82Y30/00B82Y40/00C01B32/186C01B32/188
Inventor 维嘉恩 S. 维拉萨米
Owner GUARDIAN IND CORP
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