Semiconductor luminescent material with adjustable luminescent colours and preparation method

Abstract

A semiconductor luminescent material with adjustable luminescent colours is disclosed, and is a doped ZnO/pure ZnO core-shell structure, wherein doped ZnO is used as a core, pure ZnO is coated on the surface of the doped ZnO core to form a shell layer; doping ions diffusing to the shell layer form the core due to self-purification effect are contained in the pure ZnO shell layer; the size of the doped ZnO core is 15 nm; and the thickness of the pure ZnO shell layer is 3-5 nm. The semiconductor luminescent material with adjustable luminescent colours disclosed by the invention has the advantages of overcoming the self-purification effect of doped semiconductor and increasing doping efficiency by the coating of pure ZnO on surface, realizing the combination of pure ZnO and doped ZnO, enriching energy level distribution, and being capable of adjusting the luminescent colours of the material by changing excitation wavelength because of being a doped ZnO/pure ZnO core-shell structure; additionally, the luminescent material is prepared by means of solution synthesis, as well as is simple in process, easy in operation, decreased in equipment cost, and easy in large-scale production.

Description

technical field [0001] The invention relates to the field of semiconductor luminescent materials, in particular to a semiconductor luminescent material with adjustable luminous color. Background technique [0002] In the context of the current global energy shortage, energy conservation is an important issue we face in the future. In the field of lighting, semiconductor luminescent materials, as a new type of green light source product, have long life, small size, environmental protection, energy saving, and photoelectric conversion efficiency. Advanced advantages are bound to be the trend of future development, and the 21st century will enter the era of new lighting sources represented by semiconductor lighting. [0003] Semiconductor luminescent materials mainly include undoped semiconductor luminescent materials and doped semiconductor luminescent materials. ZnO is a wide bandgap (3.37eV at room temperature) II-VI compound semiconductor. Compared with gallium nitride wit...

AI Technical Summary

Problems solved by technology

Due to these characteristics, ZnO has attracted widespread interest as an excellent candidate material for semiconductor lighting devices. At present, there have been many reports on the preparation of pure ZnO and doped ZnO, such as magnetron sputtering, chemical vapor deposition, sol- Gel, ion implantation, etc. However, due to the self-purification effect of the semiconductor itself, the dopant ions tend to be more likely to be distributed on the surface, making it difficult to achieve effective doping

Therefore, the currently used preparation methods either have high equipment costs, complicated operations, or low doping efficiency, and the prepared luminescent materials have a single luminescent color.

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