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Nanocrystalline deposition density process control monitoring method, module and manufacturing method thereof

A technology for process control and monitoring modules, applied in semiconductor/solid-state device testing/measurement, electrical components, electrical solid-state devices, etc., can solve the problem of inability to timely feedback the nanocrystal deposition process, and achieve the effect of strong applicability

Active Publication Date: 2016-05-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Existing detection methods generally need to use TEM (Transmission electron microscope, transmission electron microscope) and other slices, or wait until all the processes are completed before conducting electrical tests, and cannot provide timely feedback on whether the deposition process of nanocrystals is abnormal

Method used

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  • Nanocrystalline deposition density process control monitoring method, module and manufacturing method thereof
  • Nanocrystalline deposition density process control monitoring method, module and manufacturing method thereof
  • Nanocrystalline deposition density process control monitoring method, module and manufacturing method thereof

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Embodiment Construction

[0038] The present invention provides a testing method to realize non-destructive testing of nanocrystalline particle deposition process parameters. The invention includes the design of a nanometer process monitoring graphic module, a corresponding graphic module process flow, and an electrical testing method for the graphic module.

[0039] Specifically, the present invention designs a set of process monitoring modules in the scribe grooves of the silicon wafer, the process monitoring modules contain the deposition layer of nanocrystals, and the process of depositing particles of the nanocrystal layer is characterized by the test of the process monitoring module parameter. In the present invention, the contact holes are filled with metal on the device structure in the chip area to form electrodes, and electrodes are also formed on the process monitoring module, and then the nanocrystal deposition density is measured through the electrodes. That is, the nanocrystal deposition...

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Abstract

The invention provides a process control monitoring method of nanocrystalline deposition density, a module thereof and a manufacturing method thereof. The process control monitoring module comprises a first module and a second module which are formed on a semiconductor substrate. The first module comprises a bottom oxide layer, a nanocrystalline layer, a top oxide layer and a polysilicon layer from the bottom up. The second module comprises a top oxide layer and a polysilicon layer from the bottom up. Through testing the capacitance of the first module and the second module of the process control monitoring module, the density of deposited nanocrystalline can be obtained, thus process stability in a nanocrystalline deposition process can be monitored, and abnormal condition of nanocrystalline particle deposition process can be fed back timely.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing process, in particular to a process control monitoring method for nanocrystal deposition density, a module and a manufacturing method thereof. Background technique [0002] Flash memory is a mainstream storage device type that is widely used and generally recognized. It is a very important semiconductor component and is widely used in the electronics and computer industries. The core of the traditional flash memory is a floating gate structure based on a continuous polysilicon film. However, when the semiconductor process technology node gradually tends to be 32 nm or even smaller, the thickness of the oxide layer of the semiconductor device will also become thinner, and the reliability of the semiconductor device will also be affected. Due to the choice of its own structure and material, the polysilicon thin film floating gate memory requires the contradictory limitations of fast write...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 张博
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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