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Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof

A technology for capping silicon wafers and etching masks, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as photoresist sinking in deep grooves and photolithography processes cannot be carried out normally

Active Publication Date: 2012-07-25
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the aspect ratio of the silicon groove is greater than 2 or the groove depth is greater than 3um, the previously formed deep groove will cause the subsequently formed photoresist to be trapped in the deep groove, resulting in the inability to obtain the silicon wafer by using the conventional coating process. Uniform glue thickness plane, so that the subsequent photolithography process cannot be carried out normally

Method used

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  • Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof
  • Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof
  • Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof

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Embodiment Construction

[0070] The present invention will be further described below with reference to specific embodiments and drawings, but the protection scope of the present invention should not be limited by this.

[0071] figure 1 It shows a schematic flow chart of a method for forming a multi-silicon groove for a MEMS capped silicon wafer of this embodiment, including:

[0072] Step S11, providing a MEMS capping silicon substrate;

[0073] Step S12, forming overlapping n-layer mask layers on the MEMS cap silicon substrate, where n is a positive integer greater than or equal to 2, and after forming each mask layer, the mask layer and its All other mask layers below are subjected to photolithography and etching to form a plurality of different etching windows, wherein two adjacent mask layers have different materials;

[0074] Step S13, using the currently uppermost mask layer in the n-layer mask layer as a mask to etch the MEMS capping silicon substrate, and the etching affects the MEMS capping silicon...

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Abstract

The invention provides a method for forming multiple silicon trenches on an MEMS sealing-cap silicon chip and an etching mask structure thereof. The method comprises the following steps of: Step 11, providing an MEMS sealing-cap silicon substrate; Step 12, forming n superposed mask layers on the MEMS sealing-cap silicon substrate, and after each mask layer is formed, photoetching and etching the mask layer and all the mask layers below the mask layer to form multiple different etching windows; Step 13, with the current uppermost mask layer and the mask material on the next layer as the mask, etching the MEMS sealing-cap silicon substrate; Step 14, removing the current uppermost mask layer; and Step 15, repeating Step 13 and Step 14 till all the mask layers are removed. According to the method for forming multiple silicon trenches on the MEMS sealing-cap silicon chip, multiple trenches with a high aspect ratio can be formed on the MEMS sealing-cap silicon chip by a conventional semiconductor process, and the problem that photoresist cannot be used for the conventional coating on a sealing-cap silicon chip with trenches is solved. The method for forming multiple silicon trenches on the MEMS sealing-cap silicon chip has high industrial applicability.

Description

Technical field [0001] The invention relates to a method for forming multiple silicon grooves of a MEMS cap silicon wafer and an etching mask structure thereof, in particular to a method for forming a plurality of silicon grooves with different groove depths on a MEMS cap silicon wafer. Background technique [0002] Micro Electro Mechanical Systems (MEMS) technology is known as a revolutionary high-tech in the 21st century. Its development began in the 1960s. It is an ingenious combination of microelectronics and micromechanics. It has been developed in recent years. A new type of interdisciplinary technology that will have a revolutionary impact on human life in the future. [0003] The basic technologies of MEMS mainly include silicon anisotropic etching technology, silicon / silicon bonding technology, surface micromechanical technology, LIGA technology, etc. The above-mentioned technologies have become essential core technologies for the development and production of MEMS. In th...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81B7/00
CPCB81B7/00B81C1/00B81B2203/033B81C1/00396B81C1/00619B81B7/0077H02N1/008
Inventor 闻永祥刘琛季峰李立文
Owner HANGZHOU SILAN INTEGRATED CIRCUIT