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Band-gap reference voltage source circuit

A reference voltage source and circuit technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of large offset voltage and large area, so as to avoid the influence of offset voltage, save power consumption and area, and save Effect of Area and Power Consumption

Active Publication Date: 2012-07-25
BEIJING JINGWEI HIRAIN TECH CO INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the object of the present invention is to provide a bandgap reference voltage source circuit to solve the problems of large area and large offset voltage in the prior art

Method used

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Embodiment Construction

[0024] For reference and clarity, descriptions, abbreviations or abbreviations of technical terms used in the following text are summarized as follows:

[0025] PMOS, positive channel Metal Oxide Semiconductor, PMOS tube refers to n-type substrate, p-channel, MOS tube that transports current by the flow of holes.

[0026] The invention discloses a bandgap reference voltage source circuit, which is used to solve the problems of large area and large offset voltage in the prior art. The basic idea is: use the positive temperature coefficient of the base-emitter voltage difference between the NPN tubes in the amplification area and the negative temperature coefficient of the base-emitter voltage to design a low power consumption, low area, low offset voltage , low noise, simple structure bandgap reference voltage source circuit.

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in...

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Abstract

An embodiment of the invention discloses a band-gap reference voltage source circuit which comprises a first p-channel metal oxide semiconductor (PMOS) pipe, a second PMOS pipe, a third PMOS pipe, a fourth PMOS pipe, a first NPN type triode, a second NPN type triode, a first resistor and a second resistor. An error amplifier is not applied to the band-gap reference voltage source circuit, the influence of offset voltage and noise of the error amplifier on a system are omitted, and the power consumption and the area are reduced. In addition, independent generation of a branch circuit is not adopted in an output branch circuit of reference voltage Vref, the influence of the offset voltage caused by current image failure is avoided to some extent, and the area and the power consumption are reduced.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit power supply, and in particular relates to a bandgap reference voltage source circuit. Background technique [0002] In the field of analog integrated circuit or mixed signal design, the reference voltage source is a very important module, which provides voltage reference and current reference for the system. With the improvement of circuit integration, more and more reference voltage sources are integrated into the chip to reduce system cost. [0003] Traditional voltage references usually rely on bandgap reference circuits such as figure 1 As shown, the bandgap reference voltage source circuit includes an error amplifier, a PMOS mirror current source, a PNP transistor and a resistor, and the reference voltage is usually composed of a single branch circuit ( exist figure 1 marked with a dotted line) generated. [0004] However, the above-mentioned bandgap voltage reference circuit ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 贾晓伟邓龙利王帅旗
Owner BEIJING JINGWEI HIRAIN TECH CO INC
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