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Method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and application thereof

A technology of sapphire and single crystal, which is applied in the direction of seed crystal retention in molten liquid during growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as reducing crystal utilization rate, improve crystal quality, and solve micro-bubble defects. Effect

Inactive Publication Date: 2012-08-15
徐州协鑫光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After actual use, it is found that the density of the cake material cannot meet the growth of the crystal, and more air bubbles are formed in the center of the crystal, which reduces the utilization rate of the crystal.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. Furnace loading:

[0018] Put 85kg of high-purity alumina cake material (purity > 99.997%) into the hot field crucible, install the seed crystal on the seed crystal clip, then install the seed crystal clip on the seed crystal rod, and close the small furnace of the single crystal furnace Cover, start the cooling water circulation system, adjust the cooling water flow, and control the temperature of the water outlet within the range of 25±2°C;

[0019] 2. Vacuuming:

[0020] Start the vacuum system to make the pressure in the furnace reach 1.5×10 -2 Pa;

[0021] Three, heating material:

[0022] Start the heating system to raise the temperature from 0°C to 1650°C, with a ramp rate of 70°C / h. When the temperature reaches 1650°C, modify the temperature increase slope to 20°C / h, and raise the temperature to 2100°C.

[0023] When the heating temperature rises to 1700°C to 1850°C during the heating process, the alumina cake will start to melt, and the intermolecular a...

Embodiment 2

[0027] 1. Furnace loading:

[0028] Put 30kg of high-purity alumina cake material (purity > 99.997%) into the hot field crucible, install the seed crystal on the seed crystal clip, then install the seed crystal clip on the seed crystal rod, and close the small furnace of the single crystal furnace Cover, start the cooling water circulation system, adjust the cooling water flow, and control the temperature of the water outlet within the range of 25±2°C;

[0029] 2. Vacuuming:

[0030] Start the vacuum system to make the pressure in the furnace reach 1.5×10 -2 Pa;

[0031] Three, heating material:

[0032] Start the heating system to raise the temperature from 0°C to 1900°C, with a ramp rate of 150°C / h. When the temperature reaches 1900°C, modify the temperature increase slope to 50°C / h, and raise the temperature to 2100°C.

[0033] After seeding, shouldering, equal diameter, cooling annealing, and furnace release, the entire process is completed.

[0034] After the crysta...

Embodiment 3

[0036] 1. Furnace loading:

[0037] Put 65kg of high-purity alumina cake material (purity > 99.997%) into the hot field crucible, install the seed crystal on the seed crystal clip, then install the seed crystal clip on the seed crystal rod, and close the small furnace of the single crystal furnace Cover, start the cooling water circulation system, adjust the cooling water flow, and control the temperature of the water outlet within the range of 25±2°C;

[0038] 2. Vacuuming:

[0039] Start the vacuum system to make the pressure in the furnace reach 1.5×10 -2 Pa;

[0040] Three, heating material:

[0041] Start the heating system to raise the temperature from 0°C to 1800°C with a ramp rate of 100°C / h. When the temperature reaches 1800°C, modify the temperature increase slope to 35°C / h, and raise the temperature to 2100°C.

[0042] After seeding, shouldering, equal diameter, cooling annealing, and furnace release, the entire process is completed.

[0043] After the crystal...

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Abstract

The invention discloses a method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and the application of the method. The method comprises the following steps of: loading aluminum oxide cakes in a furnace and raising the internal pressure of the furnace to 1.5*10<-2> Pa; starting a heating system so that the temperature rises to 1650-1900 DEG C from 0 DEG C, wherein the temperature rise slope is 70-150 DEG C / h; when the temperature reaches 1650-1900 DEG C, modifying the temperature rise slope to 20-50 DEG C / h, and then continuing increasing the temperature to 2100 DEG C, and keeping the temperature at 2100 DEG C until the aluminum oxide cakes are completely melted. The method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method effectively solves the defect of microbubbles formed in sapphire growth and improves the quality of the crystals.

Description

technical field [0001] The invention relates to a method and application of a heating compound in sapphire single crystal grown by the Kyropoulos method, in particular to a method and application of a heating compound capable of reducing bubbles inside the sapphire crystal and improving crystal quality and utilization. Background technique [0002] As a lighting source, LED has the advantages of energy saving, small size, low voltage, long life, and environmental protection. These advantages of LED light source will trigger a revolution in lighting industry technology and application. α-Al 2 o 3 Single crystal (commonly known as sapphire) has a crystal structure similar to LED light-emitting semiconductor gallium nitride. Its relatively low manufacturing cost and excellent processing performance make it the most commonly used substrate material for LED chip manufacturing. There are many methods for preparing sapphire crystals, including pulling method, guided mode method, ...

Claims

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Application Information

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IPC IPC(8): C30B17/00C30B29/20
Inventor 田野陈翼拾康孙永超谈佳华
Owner 徐州协鑫光电科技有限公司
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