Diffusion bonding method of zirconium diboride-silicon carbide composite material and metal alloy
A technology of zirconium diboride silicon carbide and zirconium silicon carbide, which is applied in the field of diffusion connection between zirconium diboride silicon carbide composite materials and metal alloys, can solve the problem of low strength of active brazed joints, and achieve enhanced joint connection strength , high strength and plastic deformation ability, the effect of enhancing the connection strength
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specific Embodiment approach 1
[0015] Specific embodiment one: In this embodiment, the diffusion bonding method of zirconium diboride silicon carbide composite material and metal alloy is carried out according to the following steps:
[0016] 1. Pretreatment of zirconium diboride silicon carbide composite material and metal alloy: After grinding the zirconium diboride silicon carbide composite material and the metal alloy to be connected to it to expose the new surface, under the condition of ultrasonic power of 80~120W, Wash with acetone for 5~10min, then dry;
[0017] 2. Pretreatment of foamed nickel intermediate layer: Clean the foamed nickel intermediate layer with acetone for 5-10 minutes under the condition of ultrasonic power of 80~120W, dry it and place it between the zirconium diboride silicon carbide composite material and the metal alloy Composition of parts to be welded;
[0018] 3. Diffusion welding connection: place the parts to be welded in step 2 in a vacuum diffusion welding furnace, and e...
specific Embodiment approach 2
[0025] Embodiment 2: This embodiment differs from Embodiment 1 in that: in step 1, the ultrasonic power is 90-110 W, and the acetone is used for cleaning for 6-9 minutes. Other steps and parameters are the same as in the first embodiment.
specific Embodiment approach 3
[0026] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in Step 2, the ultrasonic power is 90-110W, and the cleaning is performed with acetone for 6-9 minutes. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.
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Abstract
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