On-line atomic layer deposition device and deposition method

A technology of atomic layer deposition and carrying device, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of complex loading components and substrate carrying devices, shorten the flushing time, reduce configuration, and facilitate Achieved effect

Inactive Publication Date: 2012-08-22
BEIJING SEVENSTAR ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is how to provide an atomic layer deposition device and a deposition method, which are used to solve the complex problem of loading components and substrate carrying devices, and can realize atomic layer deposition on the surface of the substrate in a batch manner

Method used

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  • On-line atomic layer deposition device and deposition method
  • On-line atomic layer deposition device and deposition method
  • On-line atomic layer deposition device and deposition method

Examples

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Embodiment 1

[0052] see Figure 1~5 As shown, the invention is applied in the photovoltaic field, and the size is 156×156mm under low voltage 2 A passivation film of aluminum oxide with a thickness of 15 nm was deposited on the solar panel substrate. The device includes a preheating chamber 4, five sequentially arranged ALD reaction chambers 5, a cooling chamber 6, a substrate feeding system 1, a precursor feeding system 13, a heating system, loading and unloading elements 7, and lifting elements 19 , control and detection system 12, vacuum pump 9, vacuum pipeline 11, electrical cabinet 8 and tail gas treatment system. exist figure 1 In , five reaction chambers are arranged sequentially between a preheating chamber and a cooling chamber. The reaction precursors are TMA and H 2 O or O 3 . Flushing gas is N 2 .

[0053] The substrate feeding system 1, loading and unloading components 7, heating system, exhaust gas treatment system and control and detection system 12 are shared by all...

Embodiment 2

[0056] An atomic layer deposition apparatus, which is different from Embodiment 1 in that it does not include a vacuum pump 9 and a vacuum pipeline 11, but is equipped with a fan to pump air into a closed reaction chamber formed by the substrate carrying system 2 and the upper covers 18 of each chamber . This device is used for the ALD method under normal pressure with a size of 156×156mm 2 A 15nm aluminum oxide passivation film was deposited on the solar panel substrate.

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Abstract

The invention discloses an on-line atomic layer deposition device, which comprises a substrate feeding system, a processing chamber, a precursor feeding system, at least one loading and unloading element, a lifting element, a control and detection system and an exhaust system, wherein a substrate is fed into the processing chamber by the substrate feeding system; the precursor feeding system is arranged on the side face of the processing chamber; the loading and unloading element is arranged at the inlet and outlet position of the processing chamber; the lifting element is arranged just below the processing chamber and is in contact with a substrate carrying device through an open groove on the processing chamber; and the control and detection system and the exhaust system are connected with the processing chamber respectively. According to the on-line atomic layer deposition device, the problem of the complex loading element and substrate carrying device can be solved, and atomic layer deposition on the surface of a substrate can be realized in a batch processing mode.

Description

technical field [0001] The invention relates to an atomic layer deposition device, in particular to an online atomic layer deposition device and a deposition method. Background technique [0002] The ALD reaction method of the atomic layer deposition device is as follows: at a certain temperature, the first reaction precursor is introduced into the reaction chamber to make the precursor molecules adsorb on the surface of the substrate to form an active agent; when the adsorption of the precursor reaches a saturated state When the reaction chamber is removed, the first precursor and by-products are removed; the second reaction precursor is introduced, and the second precursor chemically reacts with the active agent that has been adsorbed on the surface of the substrate, that is, the first precursor. Generate a monomolecular layer of the film to be prepared on the surface of the substrate and release gaseous by-products; remove the second precursor and by-products in the react...

Claims

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Application Information

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IPC IPC(8): C23C16/44
Inventor 赵星梅盛金龙彭文芳李春雷
Owner BEIJING SEVENSTAR ELECTRONICS CO LTD
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