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Solar cell

A solar cell and texture technology, applied in the field of solar cells, can solve problems such as surface enlargement and the influence of the total efficiency of solar cells

Inactive Publication Date: 2012-08-22
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The backside texture is an optically diffractive structure that results in an increased surface on the textured layer on the backside, so that the increased total surface recombination on the backside can adversely affect the overall efficiency of the solar cell

Method used

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Embodiment Construction

[0108] in Figure 1 to 3 The embodiments of the solar cell according to the invention shown schematically in, respectively have a base layer 1, 21, 31 configured as an n-doped silicon wafer. Figure 1 to 3 The diagrams in each show a part of the solar cell, that is, the solar cell is similar on the right and left edges. in Figure 1 to 3 Part of the cross-sectional views are shown in respectively, in which the front side of the solar cell is above and the back side is below. The solar cells shown are constructed on a silicon wafer with a size of 20cm×20cm. When the base area is doped to 10 15 cm -3 At this time, the silicon wafer has a thickness of 250 μm.

[0109] All three embodiments have a linear optical structure extending from right to left in the plane of the figure on the front, and the optical structure has a triangular cross section perpendicular to the plane of the figure, thereby forming a front surface along a surface perpendicular to the plane of the figure. The ...

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Abstract

The invention relates to a solar cell, comprising a silicon layer which has a dopant of a first dopant type, a front designed for the coupling in of light, and a rear, the silicon layer being a doped base layer(1, 21, 31), at least one textured layer (2, 22, 32) and a metal layer(4, 24, 34), being arranged on the rear of the silicon layer, optionally on additional intermediate layers, and the textured layer comprising a rear texture in at least a section thereof which rear texture is designed as an optical diffraction structure. It is essential that at least one textured intermediate structure (3, 23, 33) is arranged between the textured layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being connected to the textured layer (2, 22, 32) and / or to the base layer (1, 21, 31) in an electrically conducting manner.; The textured intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range of 800 nm to 1100 nm and has a refractive index n smaller than the refractive index of the textured layer in at least this wavelength range. The refractive index of all layers arranged between the base layer (1, 21, 31) and the textured intermediate layer (3, 23, 33) deviates by not more than 30% relative to the refractive index of silicon and the layer which is arranged directly on the rear of the base layer (1, 21, 31) is a passivation layer which passivates the surface with respect to the recombination of minority charge carriers.

Description

Technical field [0001] The present invention relates to a solar cell according to claim 1, comprising a silicon layer, a front surface configured for light input and a back surface, the silicon layer having a first doping type doping. Background technique [0002] This semiconductor-silicon solar cell is used to convert electromagnetic radiation that reaches the solar cell into electrical energy. To this end, light is input into the solar cell via the front surface configured for light input, so that electron-hole pairs are generated by absorption in the silicon layer. The silicon layer has a base doping for this purpose, and forms a pn interface at the interface with the oppositely doped emitter region, at which charge carrier separation is achieved. Through the electrical contacts of the oppositely doped regions, the solar cell can be connected to an external circuit. [0003] In addition to electrical properties, such as surface recombination properties and the material qualit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/052H01L31/075
CPCH01L31/0236H01L31/075Y02E10/52Y02E10/548H01L31/056H01L31/0547
Inventor M·赫姆勒H·豪泽P·伯格B·布拉西M·佩特斯J·C·戈尔德施密特
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV