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Manufacturing method for organic semiconductor laser based on active waveguide grating structure

A technology of organic semiconductor and grating structure, which is applied in the field of preparation of organic semiconductor lasers, can solve the problems of poor laser mode and uneven thickness of active material film, and achieve the effects of low cost, good laser mode and high production efficiency

Inactive Publication Date: 2012-08-29
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The transfer process inevitably introduces defects in the distributed feedback cavity, and the thickness of the active material film is not uniform, resulting in poor lasing modes.

Method used

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  • Manufacturing method for organic semiconductor laser based on active waveguide grating structure
  • Manufacturing method for organic semiconductor laser based on active waveguide grating structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: Preparation of a one-dimensional organic semiconductor laser based on an active waveguide (one-dimensional structure)

[0017] 1) Dissolving organic semiconductor F8BT in organic solvents such as toluene, xylene, chloroform, cyclohexane, pentane, hexane or octane, to prepare a F8BT organic semiconductor solution with a concentration of 15mg / ml;

[0018] 2) Spin-coat the F8BT organic semiconductor solution on the glass substrate. The spin coating speed is 1800rpm, and the corresponding film thickness is 150nm;

[0019] 3) The recording medium S1805 photoresist is spin-coated on the organic semiconductor thin film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;

[0020] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, among them, the wavelength of the laser used in interference lithography is 355nm, and the interference fringes can be recorded on t...

Embodiment 2

[0022] Example 2: Preparation of one-dimensional organic semiconductor laser based on active waveguide

[0023] 1) Dissolving the organic semiconductor F8BT in an organic solvent such as toluene, xylene, chloroform, cyclohexane, pentane, hexane or octane, to prepare a F8BT organic semiconductor solution with a concentration of 25mg / ml;

[0024] 2) Spin-coat the F8BT organic semiconductor solution on the glass substrate. The spin coating speed is 2000rpm, and the corresponding film thickness is 150nm;

[0025] 3) The recording medium S1805 photoresist is spin-coated on the organic semiconductor thin film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;

[0026] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, among them, the wavelength of the laser used in interference lithography is 355nm, and the interference fringes can be recorded on the upper photoresist film, and...

Embodiment 3

[0027] Example 3: Preparation of one-dimensional organic semiconductor laser based on active waveguide

[0028] 1) Dissolving organic semiconductor PFB in organic solvents such as toluene, xylene, chloroform, cyclohexane, pentane, hexane or octane, to make a PFB organic semiconductor solution with a concentration of 15 mg / ml;

[0029] 2) Spin-coat the PFB organic semiconductor solution on the glass substrate. The spin coating speed is 1000rpm, and the corresponding film thickness is 200nm;

[0030] 3) The recording medium S1805 photoresist is spin-coated on the organic semiconductor thin film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;

[0031] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, among them, the wavelength of the laser used in interference lithography is 355nm, and the interference fringes can be recorded on the upper photoresist film, and then the p...

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Abstract

The invention discloses a manufacturing method for an organic semiconductor laser based on an active waveguide grating structure, which belongs to the technical field of nanometer photo-electronic materials and devices. The manufacturing method comprises the following steps of: (1) preparing an organic solution of a fluorescent emission organic semiconductor material; (2) coating the fluorescent emission organic semiconductor solution on a substrate in a spinning way to obtain a uniform organic semiconductor film of which the thickness is 50-500 nanometers; (3) spinning a recording medium onto the organic semiconductor film obtained in the step (2) to obtain a recording medium film of which the thickness is uniform and is 50-500 nanometers; and (4) reacting a laser interface pattern with the recording medium film to form a high-quality recording medium distribution feedback structure. The method has the advantages of no need of expensive equipment, low cost, high preparation efficiency, good laser mode, low threshold value and suitability for manufacturing electric pumped semiconductor lasers.

Description

technical field [0001] The invention belongs to the technical field of nano-optoelectronic materials and devices, and involves sequentially spin-coating an organic semiconductor and a recording medium solution on a substrate, and then using laser interference lithography technology to fabricate a nano-grating on the recording medium film, realizing a new organic semiconductor Laser fabrication technology. Background technique [0002] As a prerequisite for the realization of electrically pumped organic semiconductor lasers, distributed feedback organic semiconductor lasers have attracted widespread attention in the world. However, the existing distributed feedback organic semiconductor lasers all use active materials as distributed feedback cavities, that is, it is necessary to transfer the distributed feedback structure to the active material. The transfer process inevitably introduces defects in the distributed feedback cavity, and the thickness of the active material fil...

Claims

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Application Information

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IPC IPC(8): H01S5/36H01S5/125
Inventor 张新平翟天瑞王丽
Owner BEIJING UNIV OF TECH
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