Manufacturing method for organic semiconductor laser based on active waveguide grating structure
A technology of organic semiconductor and grating structure, which is applied in the field of preparation of organic semiconductor lasers, can solve the problems of poor laser mode and uneven thickness of active material film, and achieve the effects of low cost, good laser mode and high production efficiency
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[0016] Example 1: Preparation of one-dimensional organic semiconductor laser based on active waveguide (one-dimensional structure)
[0017] 1) Dissolve the organic semiconductor F8BT in organic solvents such as toluene, xylene, chloroform, cyclohexane, pentane, hexane or octane to prepare a F8BT organic semiconductor solution with a concentration of 15 mg / ml;
[0018] 2) Spin-coating the F8BT organic semiconductor solution on the glass substrate. The spin coating speed is 1800rpm, and the corresponding film thickness is 150nm;
[0019] 3) Spin coating the recording medium S1805 photoresist on the organic semiconductor film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;
[0020] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, the laser wavelength used in interference lithography is 355nm, and interference fringes can be recorded on the upper photoresist film, and then the pho...
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[0022] Example 2: Preparation of one-dimensional organic semiconductor laser based on active waveguide
[0023] 1) Dissolve organic semiconductor F8BT in organic solvents such as toluene, xylene, chloroform, cyclohexane, pentane, hexane, or octane to prepare a F8BT organic semiconductor solution with a concentration of 25mg / ml;
[0024] 2) Spin-coating the F8BT organic semiconductor solution on the glass substrate. The spin coating speed is 2000rpm, and the corresponding film thickness is 150nm;
[0025] 3) Spin coating the recording medium S1805 photoresist on the organic semiconductor film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;
[0026] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, the laser wavelength used in interference lithography is 355nm, and interference fringes can be recorded on the upper photoresist film, and then the photoresist sample is developed and...
Example Embodiment
[0027] Example 3: Preparation of one-dimensional organic semiconductor laser based on active waveguide
[0028] 1) Dissolve organic semiconductor PFB in organic solvents such as toluene, xylene, chloroform, cyclohexane, pentane, hexane or octane to prepare a PFB organic semiconductor solution with a concentration of 15 mg / ml;
[0029] 2) Spin-coating the PFB organic semiconductor solution on the glass substrate. The spin coating speed is 1000rpm, and the corresponding film thickness is 200nm;
[0030] 3) Spin coating the recording medium S1805 photoresist on the organic semiconductor film in step 2). The spin coating speed is 2000rpm, and the corresponding film thickness is 500nm;
[0031] 4) Place the double-layer film sample prepared above in the interference light path, such as figure 1 As shown, the laser wavelength used in interference lithography is 355nm, and interference fringes can be recorded on the upper photoresist film, and then the photoresist sample is developed and fi...
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