Chip and apparatus for high-flux testing gas-phase photoelectric properties of semiconductor

A photoelectric performance, semiconductor technology, applied in the direction of measuring devices, measuring electrical variables, measuring current/voltage, etc., to achieve the effect of simple preparation method, high integration and good controllability

Inactive Publication Date: 2012-09-19
HUAZHONG UNIV OF SCI & TECH
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there is no relevant report on the application of the method of combinatorial materials...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chip and apparatus for high-flux testing gas-phase photoelectric properties of semiconductor
  • Chip and apparatus for high-flux testing gas-phase photoelectric properties of semiconductor
  • Chip and apparatus for high-flux testing gas-phase photoelectric properties of semiconductor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0027] Adopt the miniature high-throughput gas-phase photoelectric performance comprehensive testing device provided by the invention to TiO 2 / ZnO / Fe 2 o 3 The composite system was screened for photoelectric properties. In this composite material system, a total of 66 composition points were selected, as shown in Table 1:

[0028] Table 1 TiO 2 / ZnO / Fe 2 o 3 Correspondence between ingredients and serial numbers in composite systems

[0029]

[0030]

[0031] At room temperature, keep the dry air circulating inside the device, and under the condition of an applied bias voltage of 0.2V, the results of high-throughput photoelectric performance detection of these 66 component points are as follows: Figure 5 shown. The results showed that TiO 2 / ZnO / Fe 2 o 3 When the composite material system is 1:9:0, in blue light (475nm, 80.8W / m 2) under the irradiation, has the best photoelectric performance.

[0032] It can be seen that, in this example, the comprehensive t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a chip and an apparatus for high-flux testing gas-phase photoelectric properties of a semiconductor. The chip comprises an alumina ceramic substrate which is disposed at the bottom of the chip, electrode arrays and electrode pins which are respectively printed on a surface and two sides of the substrate by a screen printing method, and semiconductor photoelectric materials which are printed on each electrode through an ink-jet printing method or the screen printing method. The apparatus comprises a closed testing cavity and an LED light source. A lug boss for placing the chip is mounted on a base plate, and reeds are in a compression-type contact with the electrode pins of the chip. An integrated level of the electrode arrays on the chip can be changed according to different requirements, and has strong expansibility. Various testing conditions of the apparatus, such as wavelengths of the light source, intensity of the light source, atmosphere, humidity, bias voltage, and the like, can be changed conveniently, so that abundant testing results can be obtained and perfect databases can be established. Moreover, the apparatus is simple in structure and small in size, and has good reliability. The chip and the apparatus have important applications in the fields of room temperature gas-sensitive sensors, optical detections, photocatalysis, etc.

Description

technical field [0001] The invention relates to photoelectric performance testing of semiconductor nanomaterials, in particular to a chip and a device for high-throughput testing of semiconductor gas-phase photoelectric performance. technical background [0002] Since the use of solar energy can alleviate the social pressure brought by energy crisis and environmental problems, people pay more and more attention to the research of semiconductor optoelectronic materials and devices. Semiconductor photoelectric materials can convert a certain amount of light energy into electrical energy, thereby realizing the utilization of solar energy. Semiconductor materials with excellent photoelectric properties can be used in various fields such as gas sensors, photodetectors, photocatalysts, etc., so they have important research value. [0003] But the development of new materials is not an easy and smooth process. At present, it is impossible to accurately predict the properties of m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N21/00G01R19/00
Inventor 谢长生刘源陈浩李华曜曾大文
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products