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Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory

A composite phase transition, nano-multilayer technology, applied in the field of materials in the field of microelectronics, can solve the problems of poor data retention and low crystalline resistance, and achieve improved crystalline resistance, improved crystalline resistance, and good data retention. effect of ability

Inactive Publication Date: 2014-04-16
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings and deficiencies of the above traditional phase change materials, the object of the present invention is to provide a Si / SnSe that can achieve phase change storage with a lower operating current and has excellent data retention 2 Nano multi-layer composite phase-change thin film material and its preparation method, used to solve the shortcomings and deficiencies of traditional phase-change materials such as low crystal resistance and poor data retention ability

Method used

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  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory

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Experimental program
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Effect test

Embodiment 1

[0039] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 100nm, and the specific structures are [Si(4nm) / SnSe 2 (5nm)] 11 、[Si(8nm) / SnSe 2 (5nm)] 8 、[Si(12nm) / SnSe 2 (5nm)] 6 、[Si(16nm) / SnSe 2 (5nm)] 5 、[Si(20nm) / SnSe 2 (5nm)] 4 .

[0040] The preparation steps are:

[0041] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0042] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0043] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0044] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0045] 2. Preparation of [Si(a) / SnSe by radio frequency sputtering method 2 (b)] x Film preparation:

[0046] (a) Install Si and SnSe 2 Sputter the ta...

Embodiment 2

[0058] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 80nm, and the specific structures are [Si(3nm) / SnSe 2 (4nm)] 11 、[Si(6nm) / SnSe 2 (4nm)] 8 、[Si(10nm) / SnSe 2 (4nm)] 6 、[Si(13nm) / SnSe 2 (4nm)] 5 、[Si(16nm) / SnSe 2 (4nm)] 4 .

[0059] The preparation steps are:

[0060] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0061] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0062] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0063] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0064] 2. Prepare [Si(a) / SnSe by magnetron sputtering method 2 (b)] x Film preparation:

[0065] (a) Install Si and SnSe 2 Sputter the target, and vacu...

Embodiment 3

[0076] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 200nm, and the specific structures are [Si(8nm) / SnSe 2 (10nm)] 11 、[Si(16nm) / SnSe 2 (10nm)] 8 、[Si(24nm) / SnSe 2 (10nm)] 6 、[Si(32nm) / SnSe 2 (10nm)] 5 、[Si(40nm) / SnSe 2 (10nm)] 4 .

[0077] The preparation steps are:

[0078] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0079] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0080] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0081] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0082] 2. Preparation of [Si(a) / SnSe by radio frequency sputtering method 2 (b)] x Film preparation:

[0083] (a) Install Si and SnSe 2 Sputter ...

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Abstract

The invention relates to a Si / SnSe2 selenide nano multilayer composite phase change thin film material for a phase change memory with low operation current. A multilayer film structure is formed by alternatively arraying a single-layer Si thin film and a single-layer SnSe2 thin film in the Si / SnSe2 selenide nano multilayer composite phase change thin film material; the thickness of the single-layer Si thin film is 3-40 nm and the thickness of the single-layer SnSe2 thin film is 4-10 nm; and the total thickness of the Si / SnSe2 selenide nano multilayer composite phase change thin film material is 75-210 nm. The phase change memory based on the Si / SnSe2 selenide nano multilayer composite phase change thin film material disclosed by the invention has the advantage of extremely low operation current; and meanwhile, the keeping capability of data is stronger and the Si / SnSe2 selenide nano multilayer composite phase change thin film material can be used for the phase change memory with low operation current.

Description

technical field [0001] The invention relates to a material in the technical field of microelectronics, in particular to a Si / SnSe used for low operating current phase-change memory 2 Nano multilayer composite phase change thin film material. Background technique [0002] As a new generation of non-volatile memory technology, phase change memory (PCM) has the advantages of high reading and writing speed, high reliability, low power consumption, long life, high cycle times, and is compatible with COMS process (S . Lai and T. Lowrey: IEDM Tech. Dig., 2000, p. 243). Based on the above advantages, PCM has become the storage technology that is most likely to replace the currently commonly used FLASH technology and occupy the next-generation non-volatile storage market. PCM uses the Joule heat generated by the current to reversibly change the film resistance for programming. The film is amorphous at high resistance and crystalline at low resistance. The high and low resistance va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 沈波孙明成翟继卫
Owner TONGJI UNIV
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