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High-heat-conductance electronic packaging material

An electronic packaging material and high thermal conductivity technology, applied in the field of electronic packaging materials, can solve the problems of high production environment, production equipment and operation process, low product yield, high manufacturing cost, etc., to reduce product microcracks, thermal High conductivity, the effect of improving product density

Inactive Publication Date: 2013-11-27
STATE GRID CORP OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Since diamond is easy to graphitize at high temperature, the infiltration method is used to prepare diamond-silicon carbide composite materials in the prior art. Specifically, diamond and silicon powder are assembled in layers, and pressurized to a very high pressure value, and then heated at high temperature. Sintering under the environment, this method has extremely high requirements on the production environment, production equipment and operation process, the product yield is low, and the manufacturing cost is very high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Select diamond with a particle size of 19 μm, silicon powder with a particle size of 40 μm and a purity of 99.99% as the initial material, and add titanium powder and aluminum nitride as a sintering accelerator; diamond, silicon powder, titanium powder, aluminum nitride The ratio of parts by weight is 19.6: 33.3: 0.93: 0.5;

[0023] 2) After the above components are fully mixed;

[0024] 3) Select a graphite mold with a diameter of φ20 mm, put the above mixture into a graphite container and put it into a spark plasma sintering furnace;

[0025] 4) Vacuumize the discharge plasma sintering furnace, and start rapid sintering when the vacuum degree reaches below 12Pa;

[0026] 5) The pressure applied during the sintering process is 35MPa, the heating rate is 120°C / min, and the sintering temperature is set at 1280°C. After reaching the sintering temperature, keep it for 4 minutes, and sinter in a vacuum or inert gas environment;

[0027] 6) After sintering, the product ...

Embodiment 2

[0030] 1) Select diamond with a particle size of 23 μm, silicon powder with a particle size of 45 μm and a purity of 99.99% as the initial material, and add titanium powder and aluminum nitride as a sintering accelerator; diamond, silicon powder, titanium powder, aluminum nitride The ratio of parts by weight is 30.4:27.2:0.53:1.3;

[0031] 2) After the above components are fully mixed;

[0032] 3) Select a graphite mold with a diameter of φ20 mm, put the above mixture into a graphite container and put it into a spark plasma sintering furnace;

[0033]4) Vacuumize the spark plasma sintering furnace, and start rapid sintering when the vacuum reaches below 15Pa;

[0034] 5) The pressure applied during the sintering process is 35MPa, the heating rate is 80°C / min, the sintering temperature is set at 1320°C, and the sintering temperature is kept for 5 minutes after reaching the sintering temperature, and sintered in a vacuum or an inert gas environment;

[0035] 6) After sintering...

Embodiment 3

[0038] 1) Select diamond with a particle size of 21 μm, silicon powder with a particle size of 43 μm and a purity of 99.99% as the initial material, and add titanium powder and aluminum nitride as a sintering accelerator; diamond, silicon powder, titanium powder, aluminum nitride The ratio of parts by weight is 21.1:30.2:0.7:0.9;

[0039] 2) After the above components are fully mixed;

[0040] 3) Select a graphite mold with a diameter of φ20 mm, put the above mixture into a graphite container and put it into a spark plasma sintering furnace;

[0041] 4) Vacuumize the discharge plasma sintering furnace, and start rapid sintering when the vacuum degree reaches below 12Pa;

[0042] 5) The pressure applied during the sintering process is 38MPa, the heating rate is 100°C / min, the sintering temperature is set at 1300°C, and the sintering temperature is kept for 5 minutes after reaching the sintering temperature, and sintered in a vacuum or an inert gas environment;

[0043] 6) Aft...

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Abstract

The invention relates to an improved high-heat-conductance electronic packaging material. The material is prepared through the following steps: 1) selecting diamond and silica powder as initial materials, and adding titanium powder and aluminum nitride as sintering accelerating agents; 2) uniformly mixing the ingredients sufficiently; 3) subsequently putting the mixture into a graphite container and putting into a discharge plasma sintering furnace; 4) vacuuming the discharge plasma sintering furnace until the vacuum degree reaches less than 12-15Pa so as to start rapid sintering; 5) holding for 4-5 minutes after achieving the sintering temperature, wherein in the sintering process, the pressure added is 35-39MPa, the temperature rising speed is 80-120 DEG C per minute, the sintering temperature is set as 1280-1320 DEG C, and sintering is carried out in a vacuum or inert gas environment; and 6) cooling the products along the furnace and unloading the pressure after the sintering. The material is simple in equipment and process and low in synchronization temperature; the compactness of the product is improved and the microcrack of the product is reduced to a large extent; and the product is high in heat conductance and excellent in comprehensive performance.

Description

technical field [0001] The invention relates to an electronic packaging material, in particular to a diamond-silicon composite material prepared by a rapid sintering method with an auxiliary agent. Background technique [0002] With the development of modern science and technology, the requirements for materials are increasing day by day. In the field of electronic packaging, with the increasing complexity and density of components in electronic devices and electronic devices, the development of electronic component packaging substrates with excellent performance that can meet various requirements has become a top priority. [0003] Electronic packaging substrate material is a base electronic component, which is used to carry electronic components and their interconnections, and has a good electrical insulation substrate. Therefore, the packaging substrate must maintain a good match with the components placed on it in terms of electrical properties, physical properties, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/52C04B35/565C04B35/622C04B35/64
Inventor 韩其洋
Owner STATE GRID CORP OF CHINA
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