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Method for manufacturing resistance memory device and product and application thereof

A resistive storage and device technology, applied in the field of semiconductor storage devices, can solve the problems of high energy consumption in device preparation, poor property stability and uniformity, single function of RRAM devices, etc., achieve low power consumption, reduce preparation cost, and wide selection range widening effect

Inactive Publication Date: 2012-09-26
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The technical problem to be solved by the present invention is to overcome the shortcomings of RRAM devices in the prior art, such as single function, poor property stability and uniformity, and large energy consumption for device preparation, and provide a photoelectric device with stable and uniform properties and a size that can be reduced. Integrated resistive memory device and its preparation method

Method used

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  • Method for manufacturing resistance memory device and product and application thereof
  • Method for manufacturing resistance memory device and product and application thereof
  • Method for manufacturing resistance memory device and product and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Example 1 - Sample 1

[0052] The overall structure of the resistive memory device of sample 1 is the same as that of the comparative sample, both of which are ITO / TiO 2 / ITO structure. The difference is that sample 1 is as follows Figure 3A The preparation method of the present invention described in is prepared at room temperature.

[0053] Such as Figure 3A As shown in the flow chart, first, 400nm ITO (bottom electrode layer), 80nm TiO were deposited layer by layer on a commercial ordinary glass slide using radio frequency magnetron sputtering 2 (dielectric layer), 50nm ITO (top electrode layer). Deposition of each layer was performed at relatively low temperature (temperature range from about 0°C to about 150°C, ie, without a high temperature annealing step after deposition. The deposition process is preferably carried out at room temperature, ie at a temperature around 25°C.

[0054] Similarly, for the convenience of testing, Au was further deposited on the...

Embodiment 2

[0056] Example 2 - Sample 2

[0057] Sample 2 has the same structure as sample 1, both are ITO / TiO 2 / ITO / . The difference lies in the preparation, the ITO bottom electrode is deposited at high temperature, and the dielectric layer TiO 2 and top electrode ITO are carried out at room temperature.

[0058] Such as Figure 3B The flow chart shown, first deposits 400nm ITO (bottom electrode) on a commercially available glass slide using RF magnetron sputtering, followed by annealing at 400°C for 10 minutes;

[0059] Afterwards, 80nm TiO was further deposited on the annealed ITO bottom electrode using RF magnetron sputtering. 2 Dielectric layer and 50nm ITO top electrode, the deposition of both the dielectric layer and the top electrode was carried out at room temperature (temperature range from about room temperature to about 150° C.), and there was no high temperature annealing step after deposition.

[0060] Au is then further deposited on the ITO top electrode, and when th...

Embodiment 3

[0061] Example 3 - Sample 3

[0062] Sample 3 was prepared in the same way as Sample 1. The only difference is that the dielectric layer of sample 3 uses MgO, and the preparation method of sample 3 is also the same as Figure 3A The preparation method of sample 1 in is similar, all carried out at room temperature.

[0063] First, 400nm ITO (bottom electrode layer), 80nm MgO (dielectric layer), and 50nm ITO (top electrode layer) were deposited layer by layer on a commercial common glass slide by radio frequency magnetron sputtering. Deposition of each layer is carried out at relatively low temperature (temperature range from about 0°C to about 150°C), ie without a high temperature annealing step after deposition, preferably at room temperature.

[0064] Similarly, for the convenience of testing, Au was further deposited on the top electrode ITO, and after the deposition was completed, the top electrode was formed using standard ultraviolet lithography and reactive ion etching...

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Abstract

The invention provides a method for manufacturing a resistance memory device, a resistance memory device capable of emitting light uniformly and being manufactured by the method and an application thereof. The manufacturing method comprises a step of forming a bottom electrode, an oxide medium layer and a top electrode at the temperature of 0-150 DEG C, wherein the medium layer is formed by a material with characteristics of resistance transformation and luminescence; and at least one of the bottom electrode and the top electrode is transparent to the light emitted from the medium layer. The manufacturing method has simple steps, and energy consumption can be saved; and the resistance memory device manufactured by the method has uncrossed 8-shaped I-V characteristics, and can be used for a photoelectric integral device; besides, the light is emitted uniformly and stably, thereby the requirements of commercialization and miniaturization are satisfied.

Description

technical field [0001] The invention relates to the field of semiconductor storage devices, in particular to a method for preparing a resistance storage device, and the uniformly luminescent resistance storage device and application thereof. Background technique [0002] In the field of semiconductor technology, storage devices and light-emitting devices are two directions with outstanding prospects, and have always been the focus of research. In modern semiconductor technology, there are usually only pure memory cell devices or light-emitting devices, and there are few devices that combine storage and light-emitting. [0003] RRAM (Resistive random access memory, resistive non-volatile memory) has attracted increasing attention due to its many advantages such as high-density storage, ultra-high switching speed, long life, low power consumption, and compatibility with traditional CMOS processes. However, RRAM still has some problems on the road to practical applications, su...

Claims

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Application Information

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IPC IPC(8): H01L45/00H05B33/10
Inventor 赵宏武张培健孟洋李栋孟庆宇
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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