Etching liquid for TFT (thin film transistor)array substrate copper conductor

An array substrate and etching solution technology, applied in the field of etching solution, can solve the problems of increased engineering control difficulty, unstable etching performance, short service life, etc., so as to reduce the engineering control difficulty, improve the shorter process window, and increase the service life Effect

Active Publication Date: 2014-01-01
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) The etchant generally has a short process window in the process of etching the metal layer, which makes engineering control more difficult and seriously affects the stability and production yield of engineering production;
[0008] (2) At present, the use of copper wire etching solution generally has unstable shelf-time conditions, and it is easy to have disadvantages such as unstable etching performance and reduced process window in the later stage of storage;
[0009] (3) The service life is generally short (≤3000ppm), and the process window narrows and the performance becomes unstable in the later stage of the process, showing defects such as large critical dimension loss (CD loss)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching liquid for TFT (thin film transistor)array substrate copper conductor
  • Etching liquid for TFT (thin film transistor)array substrate copper conductor
  • Etching liquid for TFT (thin film transistor)array substrate copper conductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0034] The invention provides an etchant for copper wires of a TFT array substrate, which is mainly aimed at metal structures such as Cu / Mo and Cu / Mo-alloys. The metal alloy can include materials such as Mg, Al, Ni, V, Mn or Si, and a molybdenum layer is used. Or the molybdenum alloy layer is used as the lower layer metal to improve the adhesion and barrier effect of the lower layer metal to the glass and to stabilize the electrode potential of the barrier metal layer in the etching solution. The etching solution comprises: a main oxidant, a secondary oxidant, a chelating agent, an inhibitor, and an additive, the main oxidant is hydrogen peroxide, the secondary oxidant is phosphoric acid, sulfuric acid, and nitric acid; the chelating agent is a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided is an etchant solution for a copper conductor of a TFT array substrate, comprising: a primary oxidant, a secondary oxidant, a chelating agent, an inhibitor, and an additive; the primary oxidant is hydrogen peroxide; the secondary oxidant is phosphoric acid, sulfuric acid, and nitric acid; the chelating agent is an amino compound; the inhibitor is an amino azole compound or a carboxylic acid compound; and the additive is an amine compound containing an amino nitrogen atom and a carboxyl oxygen coordination atom. The etchant solution improves the feature of a short processing window in an etchant solution for a copper conductor, reduces the difficulty of engineering control, increases stability in engineering production and output yield; improves the shelf-time stability, with the etch stability being also maintained during the later shelf-time period; increases the use life (>=5000 ppm), with no significant narrowing of the process window occurring in the later period of the manufacturing; and ensures the performance being relatively stable.

Description

technical field [0001] The invention relates to the field of etching solution, in particular to an etching solution for copper wires of a TFT array substrate. Background technique [0002] A liquid crystal display (LCD, Liquid Crystal Display) has many advantages such as a thin body, power saving, and no radiation, and has been widely used. The existing liquid crystal display device includes a liquid crystal display panel and a backlight module (Backlight Module). Generally, a liquid crystal display panel includes a CF (Color Filter) substrate, a TFT (Thin Film Transistor) array substrate, and a liquid crystal (Liquid Crystal) disposed between the CF substrate and the TFT array substrate. By supplying power to the TFT array substrate or not, the direction of the liquid crystal molecules is controlled, and the light from the backlight module is projected onto the CF substrate to generate a picture. [0003] The performance characteristics and operating characteristics of a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18
CPCH01L21/32134H01L27/124C23F1/18
Inventor 寇浩
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products