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White LED chip structure with embedded silver nanoparticles

A technology of silver nanoparticles and LED chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as poor efficiency, low light extraction efficiency of light-emitting diodes, and low service life

Active Publication Date: 2014-10-22
许 并社 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problems of low light extraction efficiency, low service life and poor efficiency of the existing gallium nitride-based light-emitting diode chip structure, the present invention provides a white LED chip structure with embedded silver nanoparticles

Method used

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  • White LED chip structure with embedded silver nanoparticles
  • White LED chip structure with embedded silver nanoparticles
  • White LED chip structure with embedded silver nanoparticles

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Embodiment Construction

[0012] A white light LED chip structure with embedded silver nanoparticles, including a sapphire substrate 1, a multilayer quantum well InGaN / GaN active layer 6, a P-type GaN epitaxial layer 7, a negative electrode metal layer 9, and Positive electrode metal layer 10; also includes a low-temperature gallium nitride intermediate layer 2, a first N-type GaN epitaxial layer 3, an embedded silver nanoparticle layer 4, a second N-type GaN epitaxial layer 5, and Indium tin oxide transparent conductive layer 8; wherein, the low-temperature gallium nitride intermediate layer 2 is stacked on the sapphire substrate 1; the first N-type gallium nitride epitaxial layer 3 is stacked on the low-temperature gallium nitride intermediate layer 2; the embedded The silver nanoparticle layer 4 is stacked on the first N-type GaN epitaxial layer 3; the second N-type GaN epitaxial layer 5 is stacked on the buried silver nanoparticle layer 4; the multilayer quantum well indium nitride The gallium / gall...

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Abstract

The invention relates to a light emitting diode assembly and especially relates to a white-light LED chip structure possessing an embedded-type silver nanoparticle. The chip structure of a current gallium nitride system light emitting diode is easy to cause low light extraction efficiency of the light emitting diode, a short service life and poor efficiency. By using the structure of the invention, the above problems can be solved. The white-light LED chip structure possessing the embedded-type silver nanoparticle comprises a sapphire substrate, a multilayer quantum well indium gallium nitride / gallium nitride active layer, a P-type gallium nitride epitaxial layer, a negative electrode metal level, a positive electrode metal level, a low temperature gallium nitride interface layer, a first-layer N-type gallium nitride epitaxial layer, an embedded-type silver nanoparticle layer, a second-layer N-type gallium nitride epitaxial layer and a indium tin oxide transparency conducting layer. The white-light LED chip structure is based on the brand new structure and is suitable for manufacturing the light emitting diode.

Description

technical field [0001] The invention relates to a light emitting diode assembly, in particular to a white LED chip structure with embedded silver nano particles. Background technique [0002] With the rapid development of semiconductor technology, the application of GaN-based light-emitting diodes is becoming more and more extensive. Such as figure 1 As shown, the chip structure of the existing GaN-based light-emitting diode includes a sapphire substrate 1, an N-type GaN epitaxial layer 11, a multilayer quantum well InGaN / GaN active layer 6, and a P-type GaN epitaxial layer 6. Layer 7, negative electrode metal layer 9, positive electrode metal layer 10. Its working principle is: when the negative electrode metal layer and the positive electrode metal layer are connected to an external power supply, the electrons and holes from the P-type GaN epitaxial layer and the N-type GaN epitaxial layer are in the multilayer quantum well InGaN / GaN active layers combine with each oth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04
Inventor 许并社马淑芳梁建李天保刘旭光
Owner 许 并社
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