Crystal growth technology and crystal growth furnace

A crystal growth furnace and crystal growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems that the crystal size is difficult to exceed 4 inches, and the crystal size is small, so as to simplify the crystal growth process and reduce stress , high-quality effects

Inactive Publication Date: 2012-10-17
江苏同人电子有限公司
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Problems solved by technology

However, due to the process characteristics of the pulling method, the crystal size obtained is relati

Method used

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  • Crystal growth technology and crystal growth furnace

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Embodiment Construction

[0021] The crystal growth process of the present invention includes the preparation step, the crystal seeding step, the shouldering step, the equal-diameter growth step, and the cooling and annealing steps carried out in sequence.

[0022] The above-mentioned steps of the present invention are as follows: preparation step: after checking the consistency of the thermal field in the crystal growth furnace, the raw material to be melted is packed into the tungsten crucible in the crystal growth furnace, then the crystal growth furnace is closed, and the crystal growth furnace is closed under an inert atmosphere. Use the heating element in the crystal growth furnace to heat the raw material to melt it, and keep the flow rate of the refrigerant gas leading to the bottom of the tungsten crucible constant during the heating and heating period; crystal seeding step: after the raw material is melted, keep the heating element The power of the tungsten crucible is kept constant for the fi...

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Abstract

The invention provides a crystal growth technology. The crystal growth technology comprises the following steps of a preparation process, a seeding process, a shoulder-expanding process, a constant-diameter growth process, and a cooling and annealing process. The shoulder-expanding process comprises that after the seeding process, a flow of a refrigerant fed to the bottom of a tungsten crucible is increased without a change of heating element power so that a diameter of a crystal is increased. The constant diameter growth process comprises that when a flow of the refrigerant reaches to a preset value, the heating element power is maintained for a second preset time; and through monitoring of a cooling rate of the bottom of the tungsten crucible, constant diameter growth of crystals is controlled. Through an infrared thermometer, a flow of a refrigerant and the power of a heating element are controlled and a change of a temperature of the bottom of the tungsten crucible is monitored. The invention also provides a crystal growth furnace. The crystal growth furnace comprises the heating element woven from a wolfram wire mesh, the tungsten crucible surrounded by the heating element, a heat-conducting support for supporting the bottom of the tungsten crucible, and the infrared thermometer used for controlling the power of the heating element and a flow of refrigerant gas and connected to the bottom of the tungsten crucible. The crystal growth technology and the crystal growth furnace reduce requirements on technologist's experiences. The crystal growth technology simplifies the existing crystal growth technology and is convenient for industrialization.

Description

technical field [0001] The invention relates to a crystal growth process and a crystal growth furnace used in the crystal growth process. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), because of its superior characteristics in chemistry, electricity, mechanics, optics, surface properties, thermodynamics and durability, it is widely used in infrared military devices, missiles, submarines, aerospace, satellite space technology, detection and high Preferred window for high power lasers etc. Sapphire substrate is currently the most commercialized and technologically mature product in the market. GaN-based LEDs based on sapphire are mainly used for solid-state lighting, backlight, etc., and have broad market prospects. At present, the sapphire crystal growth methods mainly include the pulling method, the Kyropoulos method, and the heat exchange method. [0003] Among the above methods, the Kyropoulos method can obtain high-quality an...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/20
Inventor 于旭东盛建明胡董成
Owner 江苏同人电子有限公司
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