Flash memory and manufacturing method thereof

Abstract

The invention discloses a flash memory and a manufacturing method thereof, belonging to the technology field of a semiconductor memory. The flash memory includes a buried oxide layer on which a source terminal, a channel and a drain terminal are arranged. The channel locates between the source terminal and the drain terminal. A tunnel oxide layer, a polysilicon floating gate, a barrier oxide layer and a polysilicon controlling gate are arranged on the channel in order. A thin silicon nitride layer is arranged between the source terminal and the channel. The manufacturing method comprises the following steps of: (1) providing an SOI silicon substrate with shallow trench isolation and forming an active area; (2) growing the tunnel oxide layer and a first polysilicon layer on the silicon substrate in order and preparing the polysilicon floating gate, and growing the barrier oxide layer and a second polysilicon layer and preparing the polysilicon controlling gate; (3) etching and forming a gate stacking structure; (4) preparing the drain terminal on one side of the gate stacking structure, etching a thin silicon film on the other side of the gate stacking structure, growing the thin silicon nitride layer, then backfilling a material of silicon, and preparing the source terminal. The flash memory and the method have the advantages of high programming efficiency, low power consumption, and capability of inhibiting a source-drain punch-through effect effectively.

Description

technical field [0001] The invention belongs to the technical field of non-volatile semiconductor memory in VLSI, and in particular relates to an improved TFET (Tunneling Field Effective Transistor)-based flash memory and a preparation method thereof. Background technique [0002] With the rapid development of the semiconductor industry, a large number of various consumer electronic products have emerged. As an important part of the storage part, non-volatile semiconductor memory is also widely used in various electronic products, and its performance requirements are becoming more and more stringent. [0003] Flash memory (Flash Memory, also called flash memory) is a non-volatile semiconductor memory widely used in the industry. In order to meet the needs of each generation of technology, this kind of memory has been making some improvements including structure, material, working mechanism and so on. However, with the continuous shrinking of process nodes and the emergence...

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Problems solved by technology

For this reason, TFET-based flash memory requires special attention when programming, so as not to over-program and inject too many electrons into the floating gate, and the resulting negative potential makes the entire device operate without a gate control voltage. is in the ON mode of the P-TFET, causing leakage current

[0007] In addition, due to its own tunneling mechanism, its channel current is relatively small, which affects the range of use of this TFET-based flash memory.

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