Light-emitting diode with dielectric mirror in lateral configuration
A technology of light-emitting diodes and dielectric mirrors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing external quantum efficiency
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[0016] In general, the present invention is a light emitting diode with improved light output efficiency. The diode design simplifies the manufacturing process and helps reduce cost. Many aspects of the invention are illustrated in the drawings. For descriptive purposes, the LED structure is described in terms of Group III nitride and silicon carbide, but other materials can be included as appropriate. The use of Group III nitrides, silicon carbide, and other materials in light emitting diodes is generally recognized in the art and thus will not be described in additional detail.
[0017] As is familiar to those skilled in the art, the active region of an LED generates photons when a recombination event occurs within one or more layers of semiconductor material. The simplest structure in which this happens is a p-n junction. Such a p-n junction can comprise the active region (or active layer) of the LED structure described in this invention. However, it will be appreciated...
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