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Light-emitting diode with dielectric mirror in lateral configuration

A technology of light-emitting diodes and dielectric mirrors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing external quantum efficiency

Active Publication Date: 2015-12-16
CREELED INC (N D GES D STAATES DELAWARE NEWARK)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, these vias may limit the benefit of using a dielectric reflector and may reduce the overall external quantum efficiency of LEDs incorporating the mirror and vias

Method used

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  • Light-emitting diode with dielectric mirror in lateral configuration
  • Light-emitting diode with dielectric mirror in lateral configuration
  • Light-emitting diode with dielectric mirror in lateral configuration

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Embodiment Construction

[0016] In general, the present invention is a light emitting diode with improved light output efficiency. The diode design simplifies the manufacturing process and helps reduce cost. Many aspects of the invention are illustrated in the drawings. For descriptive purposes, the LED structure is described in terms of Group III nitride and silicon carbide, but other materials can be included as appropriate. The use of Group III nitrides, silicon carbide, and other materials in light emitting diodes is generally recognized in the art and thus will not be described in additional detail.

[0017] As is familiar to those skilled in the art, the active region of an LED generates photons when a recombination event occurs within one or more layers of semiconductor material. The simplest structure in which this happens is a p-n junction. Such a p-n junction can comprise the active region (or active layer) of the LED structure described in this invention. However, it will be appreciated...

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Abstract

A light-emitting diode (10) is disclosed, which includes an active structure (11, 12), a first ohmic contact (15) on the active structure, and a transparent layer on the active structure opposite the first ohmic contact. Conductive oxide layer (13). The transparent conductive oxide layer (13) has a larger footprint than the active structures (11, 12). A dielectric mirror (14) is positioned on the transparent conductive oxide layer (13), opposite the active structure (11, 12), and a second contact (16) is positioned on the transparent conductive oxide layer (13) on, opposite the dielectric mirror (14) and separated from the active structure (11, 12).

Description

Background technique [0001] The present invention relates to light emitting diodes. Light emitting diodes (LEDs) are a class of photonic semiconductor devices that convert an applied voltage into light by exciting an electron-hole recombination event in a suitable semiconductor material. Some or all of the energy released in the recombination event then produces photons. When recombination events generate photons, they emit photons in all directions. [0002] Light-emitting diodes share some of the same favorable characteristics as other semiconductor solid-state devices. These favorable features include durable physical features, long life, high reliability, and depending on the particular material, low cost. These physical characteristics and relatively low power requirements make LEDs desirable as light output devices. The general theory and operation of LEDs are well known in the art. Appropriate references on the structure and operation of light-emitting diodes inclu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L33/42
CPCH01L33/145H01L33/38H01L33/42H01L33/46H01L33/14
Inventor 马修·多诺弗里奥约翰·埃德蒙詹姆斯·伊贝斯顿郦挺
Owner CREELED INC (N D GES D STAATES DELAWARE NEWARK)
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