Organic electroluminescent device and method for manufacturing the same
An electroluminescence device and luminescence technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems affecting the life and stability of devices, poor air tightness of polymer films, and fragile glass, etc., to achieve improved anode The effect of work function, injection efficiency improvement, and potential barrier reduction
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Embodiment 1
[0053] After the PET (polyethylene terephthalate) film was washed with detergent, deionized water, and dried with nitrogen, it was vacuumed at 5×10 -4 In the coating system of Pa, the first aluminum film with a thickness of 50nm is vapor-deposited on the surface of the film; a layer of UV-curable adhesive with a thickness of 50nm is spin-coated on the surface of the first aluminum film as a smoothing layer; The second aluminum film is 80nm, and the second aluminum film is oxidized in an ozone system for 30s to obtain an aluminum oxide film layer, and then a hole injection layer m-MTDATA with a thickness of 30nm is sequentially evaporated on it, and a thickness of 60nm Hole transport layer NPB, luminescent layer C545T:Alq with a thickness of 20nm 3 , electron transport layer Alq with a thickness of 40 nm 3 , an electron injection layer LiF with a thickness of 1nm, a cathode Al with a thickness of 0.5nm, an Ag layer with a thickness of 20nm and a water-oxygen barrier layer with...
Embodiment 2
[0055] The PEN (polyethylene naphthalate) film was washed with detergent and deionized water successively, and after being blown dry with nitrogen, the vacuum degree was 5×10 -4 In the film coating system of Pa, the first aluminum film with a thickness of 20nm is evaporated on its surface; the acrylic resin with a thickness of 100nm is spin-coated on the surface of the first aluminum film as a leveling layer; 20nm second aluminum film, and oxidize the second aluminum film in the ozone system for 10s to obtain a thin film layer of aluminum oxide, and then sequentially evaporate a hole injection layer CuPc with a thickness of 40nm on it, and a hole transport layer with a thickness of 20nm Layer TCTA, 10nm-thick light-emitting layer DPVBi, 40nm-thick electron transport layer Bphen, 1nm-thick electron injection layer LiF, 0.5nm-thick cathode Al, 20nm-thick Ag and 100nm-thick water-oxygen barrier Layer SiO; then use PEN film as a cover plate, and use UV glue to package the device. ...
Embodiment 3
[0057] The PI (polyimide) film was washed with detergent and deionized water successively, and after drying with nitrogen, the vacuum degree was 5×10 -4 In the coating system of Pa, the first aluminum film with a thickness of 500nm is evaporated on its surface; a layer of polyimide with a thickness of 20nm is spin-coated on the surface of the first aluminum film as a smooth layer; a layer of polyimide is evaporated on the surface of the smooth layer Thickness is the second aluminum film of 100nm, and this second aluminum film is oxidized 120s in the ozone system to obtain the Al2O3 thin film layer, spin-coats one deck PEDOT above subsequently:PSS (40nm) as hole injection layer, then The hole transport layer MeO-TPD with a thickness of 50nm, the light-emitting layer CBP:DCM2 with a thickness of 20nm, the electron transport layer TPBi with a thickness of 40nm, the electron injection layer Liq with a thickness of 1nm, and the cathode Al with a thickness of 0.5nm were evaporated se...
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