Ion source with ultra-large ion beam divergence angle

An ion beam and ion source technology, applied in the field of ion sources, can solve the problems of difficulty in adjusting the divergence angle, the divergence angle of the ion beam cannot exceed 90°, and the uniformity of the beam current density is not good, and achieves stable output, simple structure and low cost. low effect

Inactive Publication Date: 2012-11-14
XIAN TECHNOLOGICAL UNIV
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Problems solved by technology

[0019] The object of the present invention is to provide an ion source with a super-large ion beam divergence angle to overcome the ion beam divergence angle in the prior art that cannot exceed 90°, and the divergence angle is difficult to adjust, and the beam in the ion beam irradiation area The problem of poor flow density uniformity

Method used

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  • Ion source with ultra-large ion beam divergence angle
  • Ion source with ultra-large ion beam divergence angle
  • Ion source with ultra-large ion beam divergence angle

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Embodiment 1

[0058] In the preparation of optical thin films, it is usually necessary to use ion beam assisted deposition to improve the film quality of the thin film. In the process of industrialized production, especially on large and medium-sized optical coating machines, in order to make all parts assisted by ion beams during the film formation process, so that the performance of the prepared film is stable and uniform, the divergence angle of the ion beam output by the ion source needs to be very large. Large, and the beam density in each divergence direction is uniform. With the novel ion beam emission source of the present invention, when ion beam bombardment is required, the working gas is first charged, and the discharge voltage of the ion source is set to 1000eV. After the gas is discharged normally, the scanning waveform in the X and Y directions is set. Adjust the scanning frequency to 30Hz to obtain a divergent ion beam. Further increase the output peak value of the sine wave...

Embodiment 2

[0060] Installed in different coating machines, or due to the different sizes of parts, sometimes the 180° ion beam divergence angle is not required. If the divergence angle is too large, part of the ion beam will bombard the inner wall of the vacuum chamber, which will affect the quality of the film formation. At this time, it is necessary to adjust the divergence angle of the ion beam.

[0061] By adopting the novel ion beam emission source of the present invention, the peak value of the driving voltage of the electromagnetic coil in the X and Y directions is reduced, and the divergence angle of the ion beam is reduced accordingly, and the optimum divergence angle of the ion beam is adjusted to obtain the size. Since the present invention adopts the ion beam scanning mode to realize the ultra-large divergence angle of the ion beam, the residence time of the ion beam at each point in the space is completely consistent, and the ion beam current density obtained in all direction...

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Abstract

The invention relates to an ion source used in an optical vacuum coating machine (ion beam auxiliary deposition equipment) or ion beam sputtering and etching equipment, in particular to the ion source with an ultra-large ion beam divergence angle. The technical scheme is that the ion source comprises a gas discharge chamber, wherein an insulating end cover is arranged at one end of the gas discharge chamber; and a focusing magnetic field generating unit and a magnetic field scanning unit are arranged outside the insulating end cover. Through a group of orthogonal magnetic field, the direction of an ion beam led into the magnetic field is controlled, and by setting the voltage change rule of electromagnetic coils in an X direction and a Y direction, space scanning on the ion beam can be realized. Controlling over the space divergence angle of the ion beam can be realized by adjusting the current magnitude of the electromagnetic coils. Compared with the prior art, the ion source has the advantages that 1, the divergence angle of the ion beam output by the ion source can be up to 180 degrees; 2, the divergence angle of the ion beam can be adjusted according to practical needs, and the requirement of different thin film deposition processes can be met; and 3, the uniformity of the flow density of the ion beam is high.

Description

technical field [0001] The invention relates to the technical field of ion beam emission sources in optical vacuum coating machines (ion beam assisted deposition equipment), ion beam sputtering or ion beam etching equipment, and in particular to an ion source with a super large ion beam divergence angle. technical background [0002] In the field of optical thin films, ion beam assisted deposition (IBAD) is an optical surface coating technology that combines thin film deposition and ion bombardment. Usually, energetic ions are used to bombard the film being deposited in a high vacuum to obtain a special effect film. [0003] The main process of the ion beam assisted deposition process is to bombard the substrate with an ion beam of a certain energy before coating to purify the surface, decompose and remove the hydrocarbons polluted on the surface, and at the same time increase the temperature of the substrate to provide surface activation to facilitate film formation. nucle...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/08H01J37/147H01J37/143
Inventor 徐均琪苏俊宏惠迎雪杭凌侠弥谦严一心
Owner XIAN TECHNOLOGICAL UNIV
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