Ion source with ultra-large ion beam divergence angle

Abstract

The invention relates to an ion source used in an optical vacuum coating machine (ion beam auxiliary deposition equipment) or ion beam sputtering and etching equipment, in particular to the ion source with an ultra-large ion beam divergence angle. The technical scheme is that the ion source comprises a gas discharge chamber, wherein an insulating end cover is arranged at one end of the gas discharge chamber; and a focusing magnetic field generating unit and a magnetic field scanning unit are arranged outside the insulating end cover. Through a group of orthogonal magnetic field, the direction of an ion beam led into the magnetic field is controlled, and by setting the voltage change rule of electromagnetic coils in an X direction and a Y direction, space scanning on the ion beam can be realized. Controlling over the space divergence angle of the ion beam can be realized by adjusting the current magnitude of the electromagnetic coils. Compared with the prior art, the ion source has the advantages that 1, the divergence angle of the ion beam output by the ion source can be up to 180 degrees; 2, the divergence angle of the ion beam can be adjusted according to practical needs, and the requirement of different thin film deposition processes can be met; and 3, the uniformity of the flow density of the ion beam is high.

Description

technical field [0001] The invention relates to the technical field of ion beam emission sources in optical vacuum coating machines (ion beam assisted deposition equipment), ion beam sputtering or ion beam etching equipment, and in particular to an ion source with a super large ion beam divergence angle. technical background [0002] In the field of optical thin films, ion beam assisted deposition (IBAD) is an optical surface coating technology that combines thin film deposition and ion bombardment. Usually, energetic ions are used to bombard the film being deposited in a high vacuum to obtain a special effect film. [0003] The main process of the ion beam assisted deposition process is to bombard the substrate with an ion beam of a certain energy before coating to purify the surface, decompose and remove the hydrocarbons polluted on the surface, and at the same time increase the temperature of the substrate to provide surface activation to facilitate film formation. nucle...

AI Technical Summary

Problems solved by technology

[0019] The object of the present invention is to provide an ion source with a super-large ion beam divergence angle to overcome the ion beam divergence angle in the prior art that cannot exceed 90°, and the divergence angle is difficult to adjust, and the beam in the ion beam irradiation area The problem of poor flow density uniformity

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