Preparation method of transmission electron microscopy sample for in-situ electrical testing
A transmission electron microscope sample and electrical technology, which is applied in the preparation of test samples and other directions, can solve the problems of difficulty in preparing TEM samples for in-situ electrical testing, and achieves the effect of solving electrical connection problems, high success rate and simple preparation process.
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Embodiment 1
[0030] The preparation method of the transmission electron microscope sample that the present invention is used for in-situ electric test comprises the following steps:
[0031] Step 1. Using the FIB etching process, the top tip of the metal probe is flattened to form a platform with a flat surface, which is used as a preparation substrate for semiconductor devices at both ends.
[0032] Such as figure 1 As shown, it is the metal probe 1 before treatment. The top of the W needle with a diameter of 3 mm is processed into a circular table with a diameter of 10 μm by using the FIB etching process, and by adjusting the acceleration voltage and the etching rate during the FIB ion etching process Current to ensure the flatness of the surface of the circular table, such as figure 2 Shown is a metal probe 1 forming a flat surface platform 2 .
[0033] Step 2: Using a semiconductor thin film preparation process, a semiconductor device with both ends is prepared on the top platform o...
Embodiment 2
[0043] In this example, the same process steps as in Example 1 were used to prepare TiN / HfO on the Pt probe 2 / TiN RRAM, TiN and HfO 2 The thin film materials are respectively obtained by means of magnetron sputtering and atomic layer deposition, and the thicknesses are 50nm / 10nm / 50nm respectively.
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