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Method for forming memory cell of flash memory

A storage unit and flash memory technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of difficulty in controlling the size of the source line layer 108 and unstable performance of flash memory, and achieve the effect of consistent resistance and stable performance

Active Publication Date: 2016-08-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] However, in the storage unit of the flash memory formed in the prior art, the size of the source line layer 108 is difficult to control, resulting in unstable performance of the flash memory

Method used

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  • Method for forming memory cell of flash memory
  • Method for forming memory cell of flash memory
  • Method for forming memory cell of flash memory

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Embodiment Construction

[0028] As mentioned in the background, in the memory cells of the flash memory formed in the prior art, it is difficult to control the size of the source line layer, resulting in unstable performance of the flash memory.

[0029] Found through inventor's research, because in the prior art, please refer to figure 1 , the forming method of the source line layer 108 is: using a chemical vapor deposition process or a physical vapor deposition process to form a source line film in the first opening and the second opening and on the surface of the mask layer 106; The polishing process removes the source line film higher than the surface of the mask layer 106 to form the source line layer 108; the formation process of the source line layer 108 is complicated, which affects the manufacturing cycle of the product.

[0030] Moreover, the prior art will form several memory cells of flash memory on the surface of the same semiconductor substrate 100; The grinding rate of the substrate 10...

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Abstract

A method for forming a memory cell of a flash memory, including: providing a semiconductor substrate with a floating gate layer on the surface, a first opening in the floating gate layer, the first opening exposing the surface of the semiconductor substrate, and the floating gate layer and The semiconductor substrates are isolated from each other by an insulating layer. There is a control gate layer on the surface of the floating gate layer. The control gate layer and the floating gate layer are isolated from each other by an interlayer dielectric layer. There is a mask layer on the surface of the control gate layer. Inside the mask layer There is a second opening, the second opening is connected with the first opening, and the second opening exposes the surface of the control gate layer; a first side wall is formed on the side wall of the first opening; a second side wall is formed on the side wall of the second opening. , the top of the second side wall is flush with the surface of the mask layer; a selective epitaxial deposition process is used to form a source line layer in the first opening and the second opening, and the top of the source line layer is not higher than the surface of the mask layer. The storage unit of the formed flash memory has stable performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a storage unit of a flash memory. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, flash memory (flash memory) has developed particularly rapidly. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] In the prior art, please refer to the storage unit of the flash memory figure 1 ,include: [0004] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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