Gallium nitride based liquid sensor and preparation method thereof

Abstract

The invention discloses a gallium nitride based liquid sensor which comprises an ohmic contact electrode, a surface passivation layer, a schottky contact electrode and a semiconductor substrate. An AlGaN / GaN heterojunction material structure is grown on an extension part of the semiconductor substrate, and the ohmic contact electrode, the surface passivation layer and the schottky contact electrode are respectively arranged on an upper surface of the AlGaN / GaN heterojunction material structure. The invention further discloses a preparation method of the gallium nitride based liquid sensor. According to the gallium nitride based liquid sensor and the preparation method of the gallium nitride based liquid sensor, the advantages including high chemical stability, high polarization 2DEG concentration, innocuity, environmental protection, thermostability, convenient system integration and the like of an AlGaN / GaN material system are utilized to develop the liquid sensor with excellent performance. and the liquid sensor has wide application prospects in the fields such as national security, environmental protection, medical treatment and public health, food safety, and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and sensors, in particular to a gallium nitride-based liquid sensor and a preparation method thereof. Background technique [0002] Liquid sensors have a wide range of applications, such as rapid blood analysis in military medicine under harsh war conditions; in industrial and agricultural production, they can detect polymers, pH values, protein molecules and certain functional groups and analysis; in environmental protection, it can detect the types and concentrations of harmful ions in the water environment. With the development of semiconductor and microelectronic technology, semiconductor liquid sensor has become one of the research hotspots in various countries. Sensors developed from traditional semiconductor materials such as Si and GaAs have poor chemical stability, long response time, and cannot work in harsh environments such as high temperature and radiation, which limits...

AI Technical Summary

Problems solved by technology

Sensors developed from traditional semiconductor materials such as Si and GaAs have poor chemical stability, long response time, and cannot work in harsh environments such as high temperature and radiation, which limits the development and application of semiconductor sensors.

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