Crystalline silicon solar battery based on embedding charge into passivation coating
A technology for solar cells and crystalline silicon cells, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of reducing photogenerated carrier recombination, increasing battery series resistance, maintaining open circuit voltage, etc., and achieving enhanced carrier collection capabilities , reduce the effect of recombination and increase life
Inactive Publication Date: 2012-12-26
XIAN UNIV OF POSTS & TELECOMM
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Problems solved by technology
This method can effectively reduce the influence of the "dead layer", but it increases the series resistance of the battery and increases the power loss
[0003] In summary, due to the influence of the traditional crystalline silicon cell structure, the existing technology has defects in suppressing the "dead layer", and cannot achieve the effect of maintaining the open circuit voltage and reducing the recombination of photogenerated carriers at the same time.
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Embodiment Construction
[0014] see Figure 4 , the specific embodiment adopts the following technical solution: it adds an optical floating gate to the passivation layer in the traditional crystalline silicon cell structure and performs charge injection.
[0015] The basic principle of this specific embodiment is: the electric field generated by the charge in the passivation layer is used to reduce the recombination of photogenerated carriers in the "dead layer", thereby increasing the collection ability of photogenerated carriers at the emitter .
[0016] The location of the optically conductive floating gate in this embodiment is between the two emitters connected to silicon in the passivation layer.
[0017] see Figure 5-6 , A certain amount of charge is stored in the optical floating gate, in which the N-type crystalline silicon solar cell stores positive charges in the optically conductive floating gate; the P-type crystalline silicon solar cell stores negative charges in the optically conduc...
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The invention provides a crystalline silicon solar battery based on embedding charge into a passivation coating and relates to the technical field of a semiconductor device. An optical floating gate is additionally arranged in the passivation coating of a traditional crystalline silicon battery structure and the charge is injected. An emission region of the crystalline silicon solar battery can be heavily doped and has greater open-circuit voltage VOC; the compounding of the emission region in a dead layer is reduced so that the service life of a photon-generated carrier is prolonged and the carrier collection capability of an emission electrode is enhanced; the width of a consumption region of a silicon PN junction is increased so that the region for generating the photon-generated carrier is increased, photon-generated current becomes large, namely greater short-circuit current ISC is formed; and the crystalline silicon solar battery has very good compatibility with a traditional crystalline silicon solar battery process.
Description
Technical field: [0001] The invention relates to the technical field of semiconductor devices, in particular to a crystalline silicon solar cell based on charges embedded in a passivation film. Background technique: [0002] see figure 1 , in the manufacturing process of crystalline silicon solar cells, the emitter region and the substrate form a PN junction, which can convert incident light energy into electrical energy. see figure 2 , The emitter region of the P-type crystalline silicon solar cell is the N-type silicon region, and the substrate is the P-type silicon region. see image 3 , The emitter area of N-type crystalline silicon solar cells is a P-type silicon area, and the substrate is an N-type silicon area. The emitter region has a significant impact on the characteristics of crystalline silicon solar cells. The emitter region is heavily doped, which causes the silicon lattice mismatch and forms a large number of traps in the silicon surface area. These tr...
Claims
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Inventor 陈海峰过立新
Owner XIAN UNIV OF POSTS & TELECOMM