Substrate treatment device and substrate treatment method

Abstract

The invention provides a substrate treatment device and a substrate treatment method. The device comprises a first load cavity, a first valve and a treatment cavity, wherein the first valve is arranged between the first load cavity and the treatment cavity, and is used for connecting the first load cavity with the treatment cavity, the substrate treatment device further comprises an air pressure regulation unit, so when the first valve is opened, the air pressure of the first load cavity is higher than the pressure of the treatment cavity. During the conveying process of a substrate, through controlling the air pressures of the first load cavity and the treatment cavity, the air in the treatment cavity cannot enter the first load cavity, so a film cannot be precipitated on the surface of a device in the first load cavity, accordingly, the service life of the first load cavity is prolonged, and the maintenance cost of the first load cavity is reduced.

Description

technical field [0001] The invention relates to a substrate processing device and method, in particular to a substrate processing device and a substrate processing method for manufacturing thin-film solar cells. Background technique [0002] Among many solar cell application technologies, thin-film solar cells are widely used in aviation, aerospace and people's daily life due to a series of advantages such as no pollution, less energy consumption, low cost, and mass production. Common thin film solar cells include: amorphous silicon thin film solar cells, copper indium gallium selenide thin film solar cells and cadmium telluride thin film solar cells. In the Chinese invention patent documents with publication numbers CN101027749A and CN101226967A, more methods for forming the above thin-film solar cells can be found. [0003] In the manufacture of thin-film solar cells, the deposition of transparent conductive oxide (TCO, transparent conductive oxide) thin films is an impor...

AI Technical Summary

Problems solved by technology

[0005] However, the existing LPCVD devices have the following problems: during the transfer of the glass substrate from the loading chamber to the processing chamber, diethyl zinc (DEZ) and water vapor required for film formation in the processing chamber will enter the loading chamber. There is a heating device composed of infrared lamps and reflectors for preheating in the chamber. The heating device itself has a relatively high temperature, so the diethylzinc (DEZ) entering the load chamber will react with water vapor. Zinc oxide is generated and deposited on the heating device. After a period of time, the surface of heating devices such as infrared lamps and reflectors will be coated with zinc oxide film, which will inevitably affect the heating efficiency of heating devices such as infrared lamps and reflectors. , shorten its service life

Therefore, frequent downtime maintenance is required for heating devices such as infrared lamps and reflectors, which affects the running time and maintenance costs of the equipment

[0006] In addition, due to the strong reactivity of diethyl zinc, it cannot be directly discharged into the atmosphere, so it is necessary to lay a special exhaust pipe and a specific exhaust gas treatment device to pass the diethyl zinc in the load chamber through the exhaust gas. The gas pipeline is discharged into the waste gas treatment device for waste gas treatment, which increases the cost of the equipment

Images