Film ablation sensor and manufacturing method thereof
A sensor and thin film technology, applied in the field of thin film ablation sensor and its preparation based on micromachining technology, thin film ablation sensor and its preparation, can solve the problems of complex production process of ablation sensor and low reliability level of sensor, etc. Achieve the effects of improving consistency, improving processing efficiency and reducing manufacturing costs
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Embodiment 1
[0035] See Figure 1 to Figure 5 , The thin-film ablation sensor 1 includes a substrate 2, a transition layer 3 provided on the substrate 2, and an ablation resistor 4 provided on the transition layer 3; a protective film 6 is provided on the ablation resistor 4; The corrosion resistance 4 is a resistance sequence composed of more than two resistances; the resistance includes a wire bonding panel 5; the wire bonding panel 5 is connected to the adapter plate 13 through a wire 10; the base 2 is provided with a height Adjustment hole 9;
[0036] Wherein, the material of the substrate 2 is Al 2 O 3 , The diameter is 50mm~150mm, the thickness is 0.5mm~1mm; the material of the transition layer 3 is Ta 2 O 5 , The thickness is 0.05μm~0.1μm; the material of the ablation resistor 4 is Au, and the thickness is 0.2μm~0.5μm; the material of the protective film 6 is SiO 2 , The thickness is 0.1μm~0.2μm. The height adjustment hole 9 is a 1.6mm×10mm through hole. The interval between the multi...
Embodiment 2
[0038] (1) For Al with a diameter of 50mm~150mm and a thickness of 0.5mm~1mm 2 O 3 The substrate 2 is cleaned to remove the oil and impurities on the polished surface of the substrate;
[0039] (2) Use ion beam sputtering to deposit Ta with a thickness of 0.05μm~0.1μm 2 O 5 The transition film 3 is used to enhance the bonding force between the Au film layer and the base layer 2;
[0040] (3) The Au film layer with a thickness of 0.2μm~0.5μm deposited by ion beam sputtering is the ablation material layer 14;
[0041] (4) Use photolithography process to make and ablate resistive photoresist mask layer on Au film. Use iodine and potassium iodide etching solution to etch the Au film to remove the unnecessary area of Au film to form Au film ablation Resistance 4 and lead welding area 5;
[0042] (5) Use photolithography process to make photoresist mask layer to protect the lead welding area;
[0043] (6) Ion beam sputtering deposits SiO with a thickness of 0.1μm~0.2μm 2 Protective film 6,...
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