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Method for thinning sapphire substrate

A sapphire substrate, femtosecond laser technology, applied in metal processing equipment, welding equipment, manufacturing tools, etc., can solve the problems of cracks, difficulty in obtaining high-quality optical surfaces, cracks, etc., and achieve the effect of high optical surface quality

Inactive Publication Date: 2013-01-30
BYD CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This traditional contact grinding and polishing method may often cause cracks or cracks during the thinning process, making it difficult to obtain high-quality optical surfaces

Method used

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  • Method for thinning sapphire substrate

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Embodiment Construction

[0009] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0010] The invention provides a method for thinning a sapphire substrate, which is characterized in that it comprises the following steps:

[0011] (1) Use femtosecond laser to irradiate the sapphire substrate to produce color centers;

[0012] (2) Scan the surface of the sapphire substrate with an ultraviolet laser.

[0013] Compared with contact grinding and polishing, the method for thinning the sapphire substrate provided by the present invention does not exert pressure on the sapphire substrate, the substrate is less prone to cracks or cracks on the surface, and th...

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Abstract

The invention provides a method for thinning a sapphire substrate. The sapphire substrate is irradiated by femtosecond laser to generate a color center, and then the bottom surface of the sapphire substrate is scanned by ultraviolet laser. Compared with contact grinding and polishing, the method requires no application of pressure to the sapphire substrate. Breakage or surface crack of the substrate occurs less easily. Heat generation in the whole thinning process is low. Heat effect on photoelectric properties of epitaxial wafers can be reduced effectively.

Description

technical field [0001] The invention relates to a method for thinning a sapphire substrate. Background technique [0002] Nowadays, LED (Light Emitting Diode) has been widely used as green lighting, and its production scale is getting larger and larger. Sapphire is widely used as a substrate material for LED chips because of its good light transmission, excellent electrical insulation and stable chemical properties. Now, the thinning of the sapphire substrate has become an essential link in the production of LED chips. Due to the high hardness of the sapphire material (Mohs 9), and the sapphire single crystal belongs to the trigonal ionic crystal, it is a typical difficult process. Hard and brittle materials are now generally polished with diamond wheels, and then polished with chemical mechanical polishing to obtain a smoother surface. This traditional contact grinding and polishing method may often cause cracks or cracks during the thinning process, making it difficult t...

Claims

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Application Information

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IPC IPC(8): B23K26/36
Inventor 陈霆
Owner BYD CO LTD
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