High etching rate non-residue acidic aluminum etching solution and its preparation process

Abstract

The invention relates to a high etching rate no-residue acid aluminum etching liquid, which is characterized by comprising phosphoric acid, acetic acid, nitric acid, an inorganic chlorine group compound, an inorganic nitrate compound, a surfactant and pure water, wherein the surfactant is a mixture of an anionic surfactant and a polyoxyethylene nonionic surfactant. The process comprises the following steps of: weighing in a ratio; adding the phosphoric acid into a material mixing tank, adding the acetic acid with stirring, stirring the phosphoric acid and the acetic acid uniformly, adding the nitric acid with stirring because a great amount of heat is released when concentrated nitric acid is diluted, and mixing the phosphoric acid, the acetic acid and the nitric acid uniformly; adding potassium chloride or potassium nitrate and the surfactant into the uniformly mixed phosphoric acid, acetic acid and nitric acid, adding the pure water, and stirring; and filtering the mixture through a filter to obtain the aluminum etching liquid. The etching liquid has high etching rate for metal aluminum, ensures stable reaction and no residue, and avoids a lateral etching phenomenon basically.

Description

technical field [0001] The invention relates to an aluminum etchant composition for etching an aluminum film and a preparation process thereof, which are used in, for example, the formation of wiring of electronic components, etc., and more specifically, are designed to be used for etching components in semiconductor devices such as semiconductor elements and liquid crystals. An aluminum etchant composition for display elements and a preparation process thereof. Background technique [0002] In recent years, there has been an increasing need for electrode and gate wiring materials with higher precision in micro-assembly for semiconductor devices such as semiconductor elements and liquid crystal display elements, and it is recommended to use metal materials with lower resistance. Aluminum is a light metal with low density. It is the most important wire material in semiconductor manufacturing. It has the advantages of low resistance, easy deposition and etching. The conductivi...

AI Technical Summary

Problems solved by technology

The book "Microfabrication Technology" published by Chemical Industry Press in 2004 gave a chemical etching solution for aluminum, which is mainly an aqueous solution composed of phosphoric acid and nitric acid. The disadvantage of this etching solution is that the etching speed is slow

That is, the etching speed of the molybdenum-aluminum etching solution composition is slow when etching a single aluminum metal film

In the process of etching pure aluminum materials with etching solution, it is often difficult to control the etching angle and etching amount, which affects the product yield and etching rate

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