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Silicon substrate isotropic wet etching process

An isotropic, wet etching technology, applied in the field of semiconductor silicon material surface micromachining and manufacturing, which can solve the problems of slowness, overheating, unfavorable reaction, etc.

Active Publication Date: 2015-06-10
TIANSHUI TIANGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there is no stirring, the substance is transferred by diffusion, which is relatively slow and unfavorable for the reaction
During the corrosion process, gas is often precipitated on the corrosion surface, which hinders the reaction and causes local overheating

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1. Formation of sacrificial layer:

[0036] (1) Put the silicon wafer into the oxidation furnace to form a layer of 800SiO2 through high temperature oxidation 2 , forming the first sacrificial layer, oxidation furnace temperature: 1120°C; time: 10′+85′+10′, SiO 2 Thickness: 800nm;

[0037] (2) Using an automatic glue coating station to grow SiO 2 A layer of negative photoresist with a viscosity of 450CP is coated on the silicon wafer of the first layer to form a second sacrificial layer, and the thickness of the photoresist is 20000nm;

[0038] 2. The formation of graphics:

[0039] Use the negative photolithography process to form the desired pattern on the second sacrificial layer; photolithography process conditions: light intensity = 1.6mW / cm 2 ; Exposure time = 10sec; Negative adhesive viscosity: 450CP.

[0040] 3. Isotropic corrosion

[0041] Preparation of corrosion solution: first measure 160mL HNO with a graduated cylinder 3 and 100mL HF, mix the tw...

Embodiment 2

[0045] 1. Formation of sacrificial layer:

[0046] (1) Put the silicon wafer into the oxidation furnace to form a layer of 800SiO2 through high temperature oxidation 2 , forming the first sacrificial layer, oxidation furnace temperature: 1120°C; time: 10′+85′+10′, SiO 2 Thickness: 850nm;

[0047] (2) Using an automatic glue coating station to grow SiO 2 A layer of negative photoresist with a viscosity of 450CP is coated on the silicon wafer of the first layer to form a second sacrificial layer, and the thickness of the photoresist is 21000nm;

[0048] 2. The formation of graphics:

[0049] Use the negative photolithography process to form the required pattern on the second sacrificial layer; photolithography process conditions: light intensity = 1.4mW / cm 2 ; Exposure time = 10sec; Negative adhesive viscosity: 450CP.

[0050] 3. Isotropic corrosion

[0051]Preparation of corrosion solution: first measure 160mL HNO with a graduated cylinder 3 and 100mL HF, mix th...

Embodiment 3

[0055] 1. Formation of sacrificial layer:

[0056] (1) Put the silicon wafer into the oxidation furnace to form a layer of 800SiO2 through high temperature oxidation 2 , forming the first sacrificial layer, oxidation furnace temperature: 1120°C; time: 10′+85′+10′, SiO 2 Thickness: 750nm;

[0057] (2) Using an automatic glue coating station to grow SiO 2 A layer of negative photoresist with a viscosity of 450CP is coated on the silicon wafer of the first layer to form a second sacrificial layer, and the thickness of the photoresist is 19000nm;

[0058] 2. The formation of graphics:

[0059] Use the negative photolithography process to form the desired pattern on the second sacrificial layer; photolithography conditions: light intensity = 1. 2mW / cm 2 ; Exposure time = 8sec; Negative adhesive viscosity: 450CP.

[0060] 3. Isotropic corrosion

[0061] Preparation of corrosion solution: first measure 160mL HNO with a graduated cylinder 3 and 100mL HF, mix the two solven...

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Abstract

The invention provides a novel silicon substrate isotropic wet etching process. The process includes forming two sacrificial layers on the surfaces of silicon substrates by adding negative 450-CP photo-resists, forming graphs needed to be machined through a surface micromachining photolithography technique, and using isotropic etching to obtain two-dimensional machined graphs with small depth-to-width ratios. According to the silicon substrate isotropic wet etching process, a certain quantity of acetic acids and water are added in a corrosion system selecting reasonable proportioning to serve as buffer agents to stabilize corrosion rates, and a corrosion solution is placed in an ice water mixture to control the reaction temperature to obtain a silicon corrosion system with an optimum corrosion rate, depth-to-width ratio and surface quality.

Description

technical field [0001] The invention relates to the technical field of surface micromachining and manufacturing of semiconductor silicon materials, in particular to a silicon-based isotropic wet etching process. Background technique [0002] The current silicon-based micromachining technology can be divided into two mainstreams: Surface Micromachining and Bulk Micromachining. The difference between silicon-based micromachining technology and traditional machining is that the design of the process is always arranged from the whole system first, and the top-down design method is adopted. Because the ratio of depth (thickness) to width (lateral dimension) of the movement mechanism of silicon surface micromachining is very small, it is called two-dimensional processing. [0003] The general wet etching process of silicon is to first oxidize the surface of the material in the etching solution, and then dissolve one or more oxides through a chemical reaction, which is actually an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/027G03F7/00
Inventor 徐谦刚杜林德王永功刘惠林谢文元
Owner TIANSHUI TIANGUANG SEMICON
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