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LED (light emitting diode) chip with horizontal structure

A technology of LED chip and horizontal structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low manufacturing efficiency of LED chips, achieve the effect of improving packaging production capacity, improving packaging efficiency, and increasing packaging substrate materials

Inactive Publication Date: 2013-02-27
SHANGHAI DANGOO ELECTRONICS TARDING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings of low LED chip manufacturing efficiency due to the existing LED chip design in the LED chip packaging and manufacturing, and to provide a chip with a horizontal structure LED with the same or similar electrode heights

Method used

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  • LED (light emitting diode) chip with horizontal structure

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Embodiment Construction

[0009] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0010] Such as figure 1 As shown, the LED chip of the horizontal structure of the present invention includes LED chips and GaN layers, n-GaN layer 5 and p-GaN layer 2, transparent SiO2 insulating layer 3, positive and negative electrodes 1, 4 etc.

[0011] A layer of transparent SiO2 insulating layer 3 is coated on the GaN layer, n-GaN layer 5 and p-GaN layer 2 of the positive or flip-chip LED chip, and electrodes are plated on the n-GaN layer 5 and p-GaN layer 2 respectively .

[0012] The substrate of the front-mount chip or flip-chip LED chip is a transparent substrate, sapphire 6 (AL2O3) or silicon carbide (SiC). The material of the transparent SiO2 insulating layer is silica gel, resin or non-conductive organic film.

[0013] Such as figure 1 As shown, the horizontal structure LED chip grows n-GaN layer 5 (including GaN buffer layer and GaN un...

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Abstract

The invention relates to an LED (light emitting diode) chip with a horizontal structure, comprising the following steps of: coating a layer of transparent SiO2 insulating layer on a positively-arranged or inversely-arranged LED chip, a GaN layer, an-GaN layer and a p-GaN layer, and respectively plating an electrode on the n-GaN layer and the p-GaN layer. The substrate of the positively-arranged or inversely-arranged LED chip is a transparent base plate, sapphire or silicon carbide. The material of the SiO2 insulating layer is silica gel, resin or non-conductive organic thin-film. Due to the LED chip with the horizontal structure provided by the invention, in the packaging manufacture of the LED, the LED chip can be directly pasted on the base plate or a bracket by a die bonder or a chip mounter like the conventional chip resistor and capacitor. Compared with the conventional LED packaging manufacture, the LED chip is suitable for the packaging technology of more LED chips, so that the base plate packaging material of the LED chip can be increased, the packaging efficiency of the LED chip can be improved, and the packaging capacity of the LED chip can be improved.

Description

technical field [0001] The invention relates to an LED chip, in particular to an LED chip with a horizontal structure. Background technique [0002] LED is a light-emitting diode (LED, Lighting emitted diode), which is a solid-state light-emitting device that uses the PN junction to emit light under the action of an electric field. With the characteristics of high life / environmental protection / energy saving, it is a new green light source. LED technology is becoming more and more mature. At present, LEDs usually emit white light through blue chips to excite yellow-green phosphors, and then adjust the wavelength to produce white light. The efficiency of warm white light produced on a large scale in the market reaches 120 lm / W, surpassing most traditional LEDs. light source. Generally speaking, LED grows p-type layer, n-type layer and p-n junction light-emitting layer on sapphire substrate or silicon carbide substrate by MOCVD (Metal-organic Chemical Vapor Deposition, me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38
CPCH01L33/38H01L33/32H01L33/44
Inventor 瞿崧文国军严华锋
Owner SHANGHAI DANGOO ELECTRONICS TARDING