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Process and special device for improving isolating oxide chemical mechanical planarization (CMP) uniformity

A technology for isolating oxides and uniformity, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems such as the inability of CMP equipment to obtain uniform thickness before value, the small CMP process window, and the reduction of CMP uniformity. Reduce dishing defects, improve product quality, and increase the effect of global planarization

Active Publication Date: 2015-05-06
BEIJING YANDONG MICROELECTRONICS
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Problems solved by technology

[0007] All in all, when the current HDP-CVD fills the isolation oxide structure with high AR ratio, the large silicon oxide thickness difference reduces the uniformity of CMP and causes device defects; and the existing CMP equipment cannot use a unified program to obtain a uniform thickness. Previous value, smaller CMP process window

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  • Process and special device for improving isolating oxide chemical mechanical planarization (CMP) uniformity
  • Process and special device for improving isolating oxide chemical mechanical planarization (CMP) uniformity
  • Process and special device for improving isolating oxide chemical mechanical planarization (CMP) uniformity

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Embodiment Construction

[0027] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a method and special equipment for improving CMP uniformity of isolation oxides are disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or process steps . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or process steps unless otherwise specified.

[0028] Figure 11 Shows a schematic structural view of the CMP special equipment according to the present invention, the equipment at least includes a first conveying device, a spin coating device, a baking device, a cleaning and drying device, a second conveying dev...

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Abstract

The invention discloses a process and a special device for improving isolating oxide CMP uniformity. The process comprises the steps of forming isolating oxide layers on a substrate; forming sacrificial layers on isolating oxide layers, wherein the height difference between tops of sacrificial layers is smaller than that between tops of isolating oxide layers; and using the same CMP technology to conduct CMP treatment on sacrificial layers and isolating oxide layers sequentially till the substrate is exposed. According to the process and the special device for improving the isolating oxide CMP uniformity, the global planarization is improved during improvement of the production efficiency, the window of the CMP process can be expanded, the selection of the anterior film thickness surface appearance is avoided, and the production efficiency is improved at the same time when dishing defects are reduced.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device and its special equipment, in particular to a method for improving the uniformity of isolation oxide chemical mechanical planarization (CMP) and its special equipment. Background technique [0002] Since the introduction of shallow trench isolation (STI) technology from the 0.25um technology node, high-density isolation of devices has become possible. As technology nodes continue to shrink, in order to improve device density and isolation effects, the aspect ratio (AR) of the shallow trench itself increases accordingly. High-density plasma chemical vapor deposition (HDP-CVD) is the mainstream technique for filling shallow trenches. This technology overcomes the possible sealing problem at the top of the trench through the cyclic process of deposition and etching, and uses silicon oxide to complete the filling of the large AR trench structure. The combination of deposition and sp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105H01L21/67
Inventor 王桂磊杨涛
Owner BEIJING YANDONG MICROELECTRONICS
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