Illumination stability amorphous metallic oxide thin film transistor (TFT) device and display device

Abstract

The invention provides an illumination stability amorphous metallic oxide thin film transistor (TFT) device which comprises a substrate, a reverse gate electrode, a gate insulating medium layer, a channel layer formed by amorphous metallic oxide, a source electrode and drain electrode, a passivation layer and a driving electrode which penetrates through the passivation layer to be contacted with the source electrode and drain electrode. The illumination stability amorphous metallic oxide TFT device is characterized in that a top gate protective electrode capable of greatly absorbing ultraviolet light is further arranged on the top portion of the passivation layer. By means of the TFT device, a transparent conducting material capable of greatly absorbing ultraviolet light is formed on the top portion of an active area of the device to effectively filter environment and reduce conductive influences of the ultraviolet light of an active light source on a channel, long-term stability of the device is improved, simultaneously electrostatic potential produced by consumption difference of the top gate protective electrode is used for repelling electric conduction charge of a back channel, surface damage of the back channel is weakened, and influences of defects on the long-term stability of the device are reduced. Simultaneously, an indium tin oxide (ITO) top gate electrode and an ITO lower electrode for driving organic light emitting diode share one layer of Mask, and no extra additional material electrode and imaging technology exist.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a device structure of an amorphous metal oxide thin film transistor (TFT) with high stability under light and a display device using the TFT, belonging to the technology of flat panel display devices. Background technique [0002] Active-Matrix Organic Light Emitting Diodes (AMOLED) displays have excellent characteristics such as short response time for moving images, bright colors, high contrast, wide viewing angles, low power consumption, ultra-light and ultra-thin, and are considered to replace The active liquid crystal display (AMLCD), which currently occupies a mainstream position, has become the core technology platform of the next generation mainstream display. The successful development of high-resolution and mainstream-sized AMOLED display panels mainly involves three technical research fields: the performance of TFT drive substrates, the characteristics of OLED materials, and t...

AI Technical Summary

Problems solved by technology

[0009] Therefore, the technical problem to be solved by the present invention is to overcome the initial stability, long-term bias electric stress stability and light exposure of the existing inverted gate BCE, or inverted gate ESL, or coplanar inverted gate amorphous oxide thin film transistors. A series of problems such as long-term bias electric stress stability, etc., provide a new type of high-efficiency and low-cost stable drive AMOLED or AMLCD display amorphous oxide TFT device structure

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