Method for preparing LED (Light-Emitting Diode) with GaN thick film vertical structure

A vertical structure, thick film technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of incomplete stress release, cracking and chip process difficulties of GaN thick film, so as to solve the problem of substrate cracking and reduce warpage degree of effect

Inactive Publication Date: 2013-03-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] However, when vertical structure LEDs are prepared on GaN thick films, due to the incomplete stress release on the GaN thick films prepared earlier, it is very easy to crack during the second epit...

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  • Method for preparing LED (Light-Emitting Diode) with GaN thick film vertical structure
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  • Method for preparing LED (Light-Emitting Diode) with GaN thick film vertical structure

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only re...

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Abstract

The invention provides a method for preparing an LED (Light-Emitting Diode) with a GaN thick film vertical structure. The method comprises the following steps of: preparing a mask pattern on the polished surface of a substrate, wherein the polished surface of the substrate is divided into a plurality of separated areas by the mask pattern to obtain the patterned substrate; depositing an n-type doped GaN thick film on the patterned substrate, wherein the thickness of the GaN thick film is ought to be more than that of the mask pattern; and epitaxially growing a multi-period quantum well LED on the GaN thick film. According to the invention, by means of partitioned growth of the GaN thick film, stresses induced by lattice mismatch and heat mismatch are released, the problem of substrate cracking in secondary epitaxy is solved, the warping degree of the substrate is reduced, and the subsequent processes of laser based substrate stripping and chip manufacturing are facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting diodes (Light Emitting Diode, LED for short), in particular to a method for preparing a GaN thick film vertical structure LED. Background technique [0002] Aluminum Nitride (AlN), Gallium Nitride (GaN), Indium Nitride (InN) and their alloys are all direct bandgap materials, and the bandgap width is continuously adjustable from 0.7eV (InN) to 6.2eV (AlN) at room temperature , is an ideal material for making blue, green and ultraviolet light-emitting devices. GaN-based LEDs are small in size, long in life, high in efficiency, and do not contain harmful substances such as mercury. They are called a new generation of green and environmentally friendly lighting sources, which are expected to replace traditional incandescent and fluorescent lamps and bring about a revolution in human lighting. [0003] Vertical structure LEDs have very good current spreading performance and heat dissipation...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 羊建坤魏同波胡强霍自强段瑞飞王军喜
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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