Complementary metal oxide semiconductor (CMOS) circuit structure and manufacture method and display device thereof

Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) circuit structure and a manufacture method and a display device thereof. A P-channel metal oxide semiconductor (PMOS) area in the CMOS circuit structure is of a low temperature poly silicon (LTPS) thin film transistor (TFT) structure, namely a P type mingled polycrystalline silicon material is utilized to prepare a PMOS layer. An N-channel metal oxide semiconductor (NMOS) area is of an Oxide TFT structure, namely an oxide material is utilized to prepare an NMOS layer. The oxide material is utilized at the NMOS area to replace the existing polycrystalline silicon material to prepare the NMOS layer, three mingled processes of the NMOS area in the LTPS process are saved, manufacture flow of the CMOS circuit structure is simplified, and production cost is reduced. Further, the oxide material is adopted to manufacture the NMOS layer of the NMOS area, crystallization is only needed to be conducted on the PMOS layer in the PMOS area, service life of a laser tube is prolonged, and production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of circuit manufacturing, in particular to a CMOS circuit structure, a preparation method thereof and a display device. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS, Complementary Metal Oxide Semiconductor) is composed of P-channel Metal Oxide Semiconductor (PMOS, Positive channel MetalOxide Semiconductor) and N-channel Metal Oxide Semiconductor (NMOS, Negativechannel-Metal-Oxide-Semiconductor). constitute. [0003] At present, low temperature polysilicon (LTPS, Low Temperature Poly-silicon) technology is generally used to prepare the semiconductor layers of the PMOS region and the NMOS region in the CMOS circuit respectively. The preparation process is relatively complicated, and the specific process steps are as follows: [0004] Step 1: On the base substrate 01, use a patterning process to form the pattern of the PMOS semiconductor layer 02 located in the PMOS area A, and t...

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Problems solved by technology

[0016] In the above-mentioned process of preparing CMOS circuits using the LTPS process, it is necessary to use at least 10 or more photoresist masks and at least 4 or more doping processes (P-type ion doping, N-type ion doping, LDD doping, etc.) and Ch doping), the production process is complex, the production cost is high, and, in step 1, the entire layer of a-Si material needs to be laser crystallized to obtain polysilicon material, and the long-time laser crystallization process will increase the product’s Production cost, and will reduce the service life of the laser tube, but also increase the production cost

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