Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of three-dimensional connecting device

A connecting device and three-dimensional technology, which is applied in the field of preparing three-dimensional connecting devices, can solve the problems of low processing efficiency and circuit precision, high selectivity of substrates, and achieve the effect of improving precision and improving processing efficiency.

Active Publication Date: 2015-11-25
BYD CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention solves the technical problems of high substrate selectivity, low processing efficiency and low circuit precision in the preparation process of three-dimensional connected devices in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0012] The invention provides a method for preparing a three-dimensional connection device, which is characterized in that it comprises the following steps:

[0013] A. Metallize the non-conductive substrate to form a non-inert metal layer on the surface of the non-conductive substrate;

[0014] B. Laser engrave the non-inert metal layer on the surface of the non-conductive substrate according to the required circuit pattern, and divide the non-inert metal layer into completely separated circuit areas and non-circuit areas;

[0015] C. Connect the circuit area on the surface of the non-conductive substrate to the negative pole of the power supply, connect the electroplating anode material to the positive pole of the power supply, and then place the non-conductive substrate and the electroplating anode material in an acidic or alkaline electroplating solution for electroplating treatment, A thickened electroplating layer is formed on the surface of the non-inert metal layer in ...

Embodiment 1

[0036] The barium titanate ceramic substrate was placed in a TEMD-600 electron beam evaporation coating machine (Beijing Tainuo Technology Co., Ltd.), and aluminum was evaporated on its surface to form an aluminum layer with a thickness of 200nm. Then the sample is clamped and positioned, and placed under EP-MD20 (Tide Laser Technology Co., Ltd.) for laser etching. The laser etching conditions include: wavelength 1064nm, spot diameter 50 microns, frequency 25KHz, engraving speed 1000mm / s, the power is 14W, and the copper layer on the surface of the barium titanate substrate is divided into completely separated circuit areas and non-circuit areas, and the distance between the two areas is 100 microns. Connect the circuit area to the negative pole of the power supply, connect the phosphor copper to the positive pole of the power supply, and then immerse the whole barium titanate sample and the phosphor copper into the acidic copper plating bath at 25°C. The acidic copper plating...

Embodiment 2

[0038] Roughen the surface of the ABS base material with potassium permanganate, then use colloidal palladium to activate it, and degelize it to form a palladium core that can catalyze electroless nickel plating on the ABS surface, and then place it in an alkaline electroless nickel plating solution for 10 minutes. A nickel layer with a thickness of 0.5 microns is formed on the ABS surface. Then the sample is clamped and positioned, and placed under EP-MD20 (Tide Laser Technology Co., Ltd.) for laser engraving. The laser engraving conditions include: wavelength 808nm, spot diameter 35 microns, frequency 20KHz, engraving speed 800mm / s, the power is 18W, and the copper layer on the surface of the ABS substrate is divided into completely separated circuit areas and non-circuit areas, and the distance between the two areas is 50 microns. Connect the circuit area to the negative pole of the power supply, connect the carbon-containing nickel anode to the positive pole of the power ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a three-dimensional connecting device. The preparation method comprises the following steps of: A. metallizing a non-electric conduction base material and forming a non-inert metal layer on the surface of the non-electric conduction base material; B. carrying out laser engraving on the non-inert metal layer on the surface of the non-electric conduction base material, and dividing the non-inert metal layer into a circuit region and a non-circuit region which are completely separated; and C. connecting the circuit region of the surface of the non-electric conduction base material with a power source cathode, connecting an electroplating anode material with a power source anode, then putting the non-electric conduction base material and the electroplating anode material in acidity or alkalinity electroplate liquid for electroplating treatment, forming an electroplating thickening layer on the surface of the non-inert metal layer of the circuit region, corroding and removing the non-inert metal layer of the non-circuit region by the acidity or alkalinity electroplate liquid. The preparation method of the three-dimensional connecting device has no special requirement on the base material and has high machining efficiency; and simultaneously the circuit accuracy is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of non-metal three-dimensional selective metallization, and in particular relates to a preparation method of a three-dimensional connection device. Background technique [0002] 3D-MID (Threedimensionalmouldedinterconnectdevice, three-dimensional connection device) technology refers to making wires and graphics with electrical functions on the surface of injection-molded plastic housings, making or installing components, so that the electrical interconnection of ordinary circuit boards The function, the function of supporting components and the support and protection of the plastic shell, as well as the shielding and antenna functions produced by the combination of mechanical entities and conductive patterns are integrated into one body to form a so-called three-dimensional connection device. [0003] At present, the production methods of 3D-MID products at home and abroad mainly include two-color injection ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/00H05K3/02H05K3/18
Inventor 连俊兰
Owner BYD CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com