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Manufacture method for grating and chip of DFB (distributed feedback) laser device

A technology of DFB laser and manufacturing method, which is applied in the field of optoelectronics, can solve the problems of poor uniformity of wet etching, high manufacturing cost, and existence of uniformity, and achieve the effects of good consistency, low manufacturing cost and high yield

Inactive Publication Date: 2013-04-17
WUHAN TELECOMM DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Traditional wet etching generally uses aqueous solution of hydrobromic acid and bromine to etch gratings. This etching solution has no selectivity for InP / InGaAsP. The depth of gratings can only be controlled by etching time, and the uniformity of wet etching is also poor.
Compared with wet etching, dry etching can control the grating depth more accurately, and the uniformity is better, but the equipment is more expensive and the production cost is high
And there is still a problem of uniformity between slices

Method used

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  • Manufacture method for grating and chip of DFB (distributed feedback) laser device
  • Manufacture method for grating and chip of DFB (distributed feedback) laser device
  • Manufacture method for grating and chip of DFB (distributed feedback) laser device

Examples

Experimental program
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Effect test

Embodiment 1

[0038] 1. Using MOCVD equipment, grow InGaAsP strain-compensated respectively confining multi-quantum well (SCH-MQW) structure epitaxial wafers. Using MOVCD (Metal-Organic Chemical Vapor Deposition, Metal-Organic Chemical Vapor Deposition) epitaxial method to grow N-InP buffer layer, N-InGaAsP confinement layer, MQW active layer, P-InGaAsP confinement layer respectively on N-InP substrate layer, and a P-InP layer (thickness 100nm), P-InGaAsP layer (thickness 30nm), and P-InP layer (thickness 100nm). Coating a photoresist for the grating on the P-InP layer of the epitaxial wafer, and baking at 90° C. for 1 minute to obtain an epitaxial wafer with photoresist.

[0039] 2. Holographically expose the epitaxial wafer with photoresist with a 325nm ultraviolet laser light source, and then soak it in a weak alkaline developer for 10-50 seconds for development, so that the photoresist forms a convex-convex structure with a period of 180-250nm.

[0040] 3. Bake the epitaxial wafer obta...

Embodiment 2

[0052] Make another two sets of epitaxial wafers with photoresist, the thickness of the first set of P-InP layer is 25nm, the thickness of P-InGaAsP layer is 50nm, the thickness of P-InP layer is 70nm; the thickness of the second set of P-InP layer is 60nm , P-InGaAsP layer thickness is 15nm, P-InP layer thickness is 40nm. Other operations are the same as in Example 1. The results show that the obtained grating structure has good uniformity and the yield of DFB laser chips is high.

[0053] The yield rate of DFB laser chips completed in the above two embodiments reaches 40-50%, far higher than the 30% yield rate of DFB laser chips in the industry.

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Abstract

The invention discloses a manufacture method for a grating and a chip of a DFB (distributed feedback) laser device. When the grating of the DFB laser device is manufactured, a grating layer structure is provided with two P-InP layers and a P-InGaAsP layer which is arranged between the two P-InP layers, photoresist for the grating is firstly coated outside a top-end P-InP layer, and after the top-end P-InP layer is dried, holographic exposure and developing are carried out, a uniform grating is manufactured; then corrosion liquid formed by HC1, H3PO4 and H2O is used for corroding one P-InP layer; corrosion liquid formed by H2SO4, H2O2 and H2O is used for corroding the P-InGaAsP layer; and finally the photoresist is removed to obtain the grating for the DFB laser device. According to the sandwich grating structural design and the selective corrosion of two kinds of materials of InGaAsP / InP, the uniform grating with the same depth can be obtained. According to the manufacture method, the manufacture cost is low, the uniformity of the grating is excellent, the rate of finished products for the DFB laser device is high, and the requirement for large-scale production is facilitated.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for manufacturing a DFB laser grating and a chip. Background technique [0002] Due to the stable dynamic single longitudinal mode point of InP-based DFB lasers, it is widely used in optical fiber communication transmitting devices. The grating structure with a period of 180-250nm in the InP-based DFB laser selects the wavelength, and a stable dynamic single longitudinal mode of 1.2-1.7μm is obtained. The quality and uniformity of the grating directly affect the performance and yield of the DFB laser. [0003] The traditional grating manufacturing method is as follows: coat photoresist or PMMA on the epitaxial wafer, and obtain patterns by holographic exposure method and E-beam exposure method. Then perform wet etching with bromic acid series etching solution, or use RIE or ICP equipment for dry etching, and transfer the pattern to the substrate to form a grati...

Claims

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Application Information

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IPC IPC(8): H01S5/12
Inventor 王任凡刘应军阳红涛胡忞远熊永华
Owner WUHAN TELECOMM DEVICES