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Magnetoresistive element and magnetic random-access memory

A technology of random access memory and magnetoresistive effect element, applied in static memory, digital memory information, magnetic field controlled resistor, etc., can solve the problem of difficult to control the pulse width of the element with high precision

Active Publication Date: 2013-04-24
키오시아가부시키가이샤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in actual memory cells, there are delays due to variations in wiring capacitance and variations in pulse waveforms. Therefore, there is a problem that it is generally difficult to control the pulse width between elements with high precision.
Therefore, stable writing without erroneous writing cannot be performed

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ）

[0048] Figure 5 The magnetoresistance effect element of the first embodiment is shown in . The magnetoresistance effect element 1 of this embodiment has a laminated structure consisting of a magnetic recording layer 12 whose magnetization direction can be changed, a tunnel barrier layer 14, a magnetic reference layer 16 whose magnetization direction is substantially fixed, an isolation layer 18, and a magnetic rotation layer 12. Layers 20 are stacked in this order or in the reverse order.

[0049] The magnetic recording layer 12 has a ferromagnetic layer capable of changing the direction of magnetization before and after energization when the direction of magnetization is substantially perpendicular to the film surface and current is passed to the magnetoresistive element 1 . The magnetic reference layer 16 has a ferromagnetic layer. Even if the magnetization direction of the ferromagnetic layer is substantially perpendicular to the film surface and a current is passed throu...

no. 2 Embodiment approach ）

[0080] Generally, in a magnetoresistive element using a magnetic film having perpendicular magnetization (perpendicular magnetization film), the leakage field from the magnetic reference layer acts on the magnetic recording layer, and the stability of information "0" and "1" is unstable. symmetry. Therefore, in order to reduce the influence of the leakage field from the magnetic reference layer, the magnetoresistance effect element of the second embodiment is configured to include a magnetic field adjustment layer having magnetization in the opposite direction to the magnetization of the magnetic reference layer. Figure 12 The magnetoresistance effect element of this second embodiment is shown in . exist Figure 5 In the magnetoresistance effect element of the first embodiment shown, the magnetoresistance effect element 1 of the second embodiment is configured such that a non-magnetic metal layer 11 is interposed on the side of the magnetic recording layer 12 opposite to the...

no. 3 Embodiment approach ）

[0084] Figure 14 A magnetoresistance effect element of a third embodiment is shown in . The magnetoresistance effect element 1 of the third embodiment is configured by Figure 5 In the magnetoresistance effect element of the first embodiment shown, an antiferromagnetic coupling film 20A is used as the magnetic rotation layer 20 . This antiferromagnetic coupling film 20A has a laminated structure in which a ferromagnetic layer 20a, a nonmagnetic layer 20b, and a ferromagnetic layer 20c are sequentially laminated on the isolation layer 18, and the ferromagnetic layer 20a and the ferromagnetic layer 20c are reversed via the nonmagnetic layer 20b. ferromagnetic coupling.

[0085] In the magnetoresistive effect elements of the first to second embodiments, a magnetic film having in-plane magnetization (in-plane magnetization film) is used as the magnetic rotation layer 20, so there is a complex magnetic domain structure such as an eddy current magnetic domain structure Case. If...

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Abstract

This magnetoresistive element comprises: a first ferromagnetic layer (12) having variable magnetization substantially perpendicular to a film surface; a second ferromagnetic layer (16) having invariable magnetization substantially perpendicular to the film surface; a first nonmagnetic layer (14) provided between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer (20) provided on the reverse side of the second ferromagnetic layer from the first nonmagnetic layer, the third ferromagnetic layer having magnetization substantially parallel to the film surface and generating a rotating magnetic field through the injection of spin-polarized electrons; and a second nonmagnetic layer (18) provided between the second ferromagnetic layer and the third ferromagnetic layer. The magnetization of the first ferromagnetic layer can be reversed by means of the rotating magnetic field, which is generated from the third ferromagnetic layer by passing a first electric current in either the direction from the third ferromagnetic layer through the second ferromagnetic layer towards the first ferromagnetic layer, or in the direction from the first ferromagnetic layer through the second ferromagnetic layer towards the third ferromagnetic layer. Likewise, the magnetization of the first ferromagnetic layer can be reversed to a direction different from that achieved by applying the first current by applying a second electric current having a different current density from that of the first electric current in the same direction and generating electrons that have been spin-polarized by the second ferromagnetic layer.

Description

technical field [0001] Embodiments of the present invention relate to a magnetoresistance effect element and a magnetic random access memory. Background technique [0002] Conventionally, various types of solid-state magnetic memories have been proposed. In recent years, a magnetic random access memory (MRAM: Magnetic Random Access Memory) using a magnetoresistance effect element expressing a giant magnetoresistance (GMR: Giant Magneto Resistive) effect has been proposed. Tunneling Magneto Resistive) effect of ferromagnetic tunnel junction magnetic random access memory has attracted attention. [0003] The MTJ (Magnetic Tunnel Junction) element of the ferromagnetic tunnel junction is mainly composed of a three-layer film of a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. Also, at the time of reading, a current flows through the insulating layer through a tunnel. In this case, the resistance value of the ferromagnetic tunnel junction cha...

Claims

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Application Information

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IPC IPC(8): H01L21/8246G11C11/15H01L27/105H01L29/82H01L43/08
CPCH01L43/02G11C11/16H01F10/3272H01F10/325H01F10/32H01F10/3286H01L27/228H01F10/123H01L27/224H01F10/3254H01L43/08H01F10/329G11C11/1655G11C11/1659G11C11/161G11C11/1675G11C11/1693H10B61/10H10B61/22H10N50/10H10N50/80
Inventor 中山昌彦与田博明岸达也小濑木淳一甲斐正相川尚德池川纯夫
Owner 키오시아가부시키가이샤
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