Testing method of single event functional interruption of Spacewire circuit

Abstract

The invention discloses a testing method for single event functional interruption of a Spacewire circuit, which comprises the following steps that firstly two test systems are established respectively using an SPARC V8 processor and the Spacewire circuit, and the two test systems establish data transmission channels by each Spacewire circuit; then the Spacewire circuit B is arranged in a particle irradiation environment; the data transmission channels are set as that the test system A sends data to the test system B; after receiving the data, the test system B forwards the received data to the test system A again; and after data transmission is started, if the test system A cannot send the data to the test system B or the test system A cannot acquire the forwarded data from the test system B, the single event functional interruption occurs on the Spacewire circuit B, and then a reason for functional interruption is analyzed according to the read-back data of a control register of the Spacewire circuit B. The method can provide the basis for correlation research of a single event effect and a microelectronic device.

Description

technical field [0001] The invention relates to a method for testing and verifying the anti-single particle capability of a microelectronic device. Background technique [0002] With the rapid development of semiconductor technology, the integration of microelectronic devices used in spacecraft continues to increase, and spacecraft gradually use more large-scale integrated circuits. As the feature size and operating voltage of devices are getting smaller and smaller, correspondingly, the critical charge is getting smaller and smaller, and the single event effect is becoming more and more obvious. In recent years, it has been found that the single event effect has a more significant impact on the working performance of the device, and its damage mode is becoming more and more complicated. There are more and more forms of function interruption caused by the single event effect. Therefore, it is impossible to correctly evaluate the radiation resistance of microelectronic devic...

AI Technical Summary

Problems solved by technology

In recent years, it has been found that the single event effect has a more significant impact on the working performance of the device, and its damage mode is becoming more and more complicated. There are more and more forms of function interruption caused by the single event effect. Therefore, the radiation resistance of microelectronic devices cannot be correctly evaluated, and the radiation resistance of microelectronic devices cannot be improved in the later development of microelectronic devices.

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