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A processing method of tantalum anode blocks for reducing the high-frequency equivalent series resistance of tantalum capacitors

A technology of equivalent series resistance and tantalum anode blocks, applied in capacitors, electrolytic capacitors, circuits, etc., can solve the problems of increasing the difficulty of production process control and production costs, and achieve the effects of easy control, simple process operation, and high efficiency

Active Publication Date: 2017-07-11
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The implementation of these technologies improves the equivalent series resistance of tantalum capacitors to a certain extent, but at the same time increases the difficulty of controlling the production process and production costs.

Method used

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  • A processing method of tantalum anode blocks for reducing the high-frequency equivalent series resistance of tantalum capacitors

Examples

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Comparison scheme
Effect test

Embodiment 1

[0035] Take the CA45 type 25V47μF as an example: take 150mg of tantalum powder with a CV value of 32000μF.V / g, and press it into 4.8x3.5x1.6mm 3 , The anode tantalum block with a density of 5.3g / cm3, after being energized, goes to the coating process to complete the decomposition of concentrated manganese nitrate solution. Immerse the tantalum anode block in the suspension of the semiconductor layer outside the cathode, the suspension is 50% manganese nitrate solution: manganese dioxide=1000ml:90g, the immersion height is equal to the height of the tantalum block, store at room temperature for 30 minutes, and then enter 120°C Dry in an oven for 30 minutes, decompose the manganese nitrate solution for 3 minutes under high temperature saturated steam at 210°C; immerse the tantalum anode block in a manganese nitrate solution with a concentration of 65% for 2 minutes, and decompose it in saturated steam at 250°C for 8 minutes ;Immerse the tantalum anode block in the graphite solut...

Embodiment 2

[0037] Take the CA45 type 25V47μF as an example: take 150mg of tantalum powder with a CV value of 32000μF.V / g, and press it into 4.8x3.5x1.6mm 3 , The anode tantalum block with a density of 5.3g / cm3, after being energized, goes to the coating process to complete the decomposition of concentrated manganese nitrate solution. Immerse the tantalum anode block in the suspension of the semiconductor layer outside the cathode, the suspension is 70% manganese nitrate solution: manganese dioxide = 1000ml: 180g, the immersion height is equal to the height of the tantalum block, store at room temperature for 60 minutes, and then enter 150°C Dry in an oven for 60 minutes, decompose the manganese nitrate solution for 6 minutes under the condition of high temperature saturated water vapor at 240°C; immerse the tantalum anode block again in the manganese nitrate solution with a concentration of 65% for 4 minutes, and decompose it in saturated steam at 300°C for 10 minutes ;Immerse the tantal...

Embodiment 3

[0039] Take the CA45 type 16V100μF as an example: use 110mg of tantalum powder with a CV value of 50000μF.V / g, and press it into 4.5x3.4x1.4mm 3 , An anode tantalum block with a density of 5.2g / cm3. After energization, the decomposition of concentrated manganese nitrate solution is completed in the coating process. Immerse the tantalum anode block in the suspension of the external semiconductor layer of the cathode, the manganese dioxide in the suspension is 50% manganese nitrate solution: manganese dioxide=1000ml:90g, the immersion height is equal to the height of the tantalum block, and it is stored at room temperature for 30 minutes , into a 120°C oven for 30 minutes, decompose the manganese nitrate solution for 3 minutes under the condition of high-temperature saturated water vapor at 210°C; Decompose for 8 minutes, ③The tantalum anode block is immersed in the graphite solution for 3 seconds, the depth is 1 / 4 of the height of the tantalum anode block, and after being stor...

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Abstract

The invention discloses a method for processing a tantalum anode block for reducing the high-frequency equivalent series resistance of a tantalum capacitor. The method comprises immersing the tantalum anode block into a suspension of the semiconductor layer outside the cathode to process the semiconductor layer outside the cathode, and immersing the tantalum anode block into a graphite solution. Processing of cathode transition layer and coating of graphite and silver paste. This method eliminates the interlayer contact resistance by adding a transition layer between the semiconductor layer and the conductive layer on the surface of the tantalum anode block, and reduces the ESR value of the tantalum electrolytic capacitor by more than 30%. High efficiency, suitable for industrial mass production.

Description

technical field [0001] The invention relates to the technical field of manufacturing tantalum electrolytic capacitors, in particular to a method for processing tantalum anode blocks for reducing the high-frequency equivalent series resistance of tantalum capacitors. Background technique [0002] With the increase of circuit design frequency, the high-frequency equivalent series resistance of tantalum capacitors has become a general electrical performance test index. According to the structural characteristics of tantalum capacitors, the oxide film layer that affects the high-frequency equivalent series resistance is the anode metal layer, dielectric layer, inner electrolyte layer, outer cathode layer (including graphite layer and silver layer). For this reason, many tantalum capacitor manufacturers have carried out a lot of research on how to reduce the high-frequency equivalent series resistance of tantalum electrolytic capacitors, such as reducing the pressing density, inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/042H01G9/048
Inventor 王俊蒙勇黄艳刘一峰胡科正
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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