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Manufacturing method for back-illuminated CMOS (complementary metal oxide semiconductor) image sensor

A technology of an image sensor and a manufacturing method, applied in semiconductor devices, radiation control devices, circuits, etc., can solve problems such as contact hole voids, and achieve the effect of preventing voids and ensuring quality

Active Publication Date: 2015-07-08
OMNIVISION TECH (SHANGHAI) CO LTD
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Problems solved by technology

[0009] The object of the present invention is to provide a method for manufacturing a back-illuminated CMOS image sensor, to solve the problem of voids in the formed contact holes during the manufacturing process of the existing back-illuminated CMOS image sensor

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  • Manufacturing method for back-illuminated CMOS (complementary metal oxide semiconductor) image sensor
  • Manufacturing method for back-illuminated CMOS (complementary metal oxide semiconductor) image sensor
  • Manufacturing method for back-illuminated CMOS (complementary metal oxide semiconductor) image sensor

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Embodiment Construction

[0041] The manufacturing method of the back-illuminated CMOS image sensor proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0042] Please refer to Figure 4 , which is a schematic flowchart of a manufacturing method of a back-illuminated CMOS image sensor according to an embodiment of the present invention. Such as Figure 4 As shown, the manufacturing method of the back-illuminated CMOS image sensor comprises:

[0043] S40: Provide a wafer bonding structure, the wafer bonding structure includes a logic wafer and a pixel wafer bonded together, and grooves are formed in ...

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Abstract

The invention provides a manufacturing method for a back-illuminated CMOS (complementary metal oxide semiconductor) image sensor. The manufacturing method includes: controlling growing speed of electroplated layers at positions of a groove through an electroplating material including accelerator and inhibitor at a proportion of 4-6:3-9 to prevent the groove from being sealed prematurely; and further, dividing an electroplating process into three types to be executed, wherein, the thickness of the electroplated layer formed by the electroplating process of the first type is 1%-10% of the depth of the groove, the thickness of the electroplated layer formed by the electroplating process of the second type is 50%-95% of the depth of the groove, and the thickness of the electroplated layer formed by the electroplating process of the third type is 2%-45% of the depth of the groove, so that the electroplated layers are sequentially formed according to different depths in the groove, quality of the formed electroplated layers is guaranteed, and formed contact holes are prevented from having cavities.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a method for manufacturing a back-illuminated CMOS image sensor. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. Image sensors can improve the visual range of the human eye, enabling people to see the microcosm and macrocosm that cannot be seen by the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. Life, physiology, the occurrence and development of disease, and so on. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer be separated from image sens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146C25D7/12C25D5/10
Inventor 费孝爱洪齐元
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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