Gallium Nitride-based High Electron Mobility Transistor Structure and Fabrication Method with Potential Barrier Layer

Abstract

A gallium-nitride-based high electronic mobility transistor structure with a barrier layer comprises a substrate, a nucleating layer manufactured on the substrate, an unintentionally doped high resistance layer manufactured on the nucleating layer, an unintentionally doped high mobility channel layer manufactured on the unintentionally doped high resistance layer, an unintentionally doped aluminum nitride space layer manufactured on the unintentionally doped high mobility channel layer, an unintentionally doped barrier layer manufactured on the unintentionally doped aluminum nitride space layer and an unintentionally doped gallium nitride cap layer manufactured on the unintentionally doped barrier layer. The gallium-nitride-based high electronic mobility transistor structure can improve a limiting effect on channel two-dimensional electron gas and increase output power of a developed device, and simultaneously grate current of the device is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a gallium nitride-based high electron mobility transistor (HEMT) structure and manufacturing method with a potential barrier layer. The transistor uses a combination of non-intentionally doped aluminum gallium nitride and aluminum nitride The new barrier layer and high-mobility gallium nitride channel layer can significantly increase the two-dimensional electron gas surface density and the confinement effect on the two-dimensional electron gas, reduce the influence of the heterojunction interface on the electronic properties of the channel, and improve The performance of the developed device. Background technique [0002] Gallium nitride-based semiconductor materials have excellent physical and chemical properties, and are especially suitable for the preparation of high-frequency, high-power, high-electron mobility transistors. GaN-based high electron mobility transistors...

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Problems solved by technology

However, doping will reduce the integrity of the material lattice, resulting in a decrease in the crystal quality of the AlGaN layer, increasing the interface roughness between the GaN and AlGaN layers, and reducing the electron mobility; (2) using high Al Composition barrier layer AlGaN / GaN HEMT structure, as the barrier layer Al composition increases, the heterojunction band order and polarization electric field increase, which can significantly increase the two-dimensional electron gas surface density

However, when the Al composition is high, the large lattice mismatch will lead to the deterioration of the crystal quality, surface and interface quality of the AlGaN barrier layer, and the strain-induced deep level defects will increase, which will enhance the scattering and reduce the mobility; At the same time, when the Al composition is too high, the large lattice mismatch limits the thickness of the barrier layer, making it difficult to generate a strong two-dimensional electron gas

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