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Spin injection electrode production method

A technology of spin injection and manufacturing method, which is applied in the manufacturing/processing of electromagnetic devices, manufacturing of inductors/transformers/magnets, circuits, etc., and can solve the problems that spin injection electrodes have not been reported

Active Publication Date: 2013-05-29
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, these crystals do not match the graphene lattice with its two-dimensional planar structure of six rings
Therefore, spin injection electrodes using these ferromagnets have not been reported so far

Method used

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Experimental program
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Embodiment ）

[0068] Hereinafter, the present invention will be described in more detail through examples.

Embodiment 1）

[0070] First, graphene 1 was prepared referring to the description in Science, vol.306, p.666-p.669 (2004). Specifically, the cellophane tape was pressed against 1 mm thick highly oriented pyrolytic graphite (Highly Oriented Pyrolytic Graphite: HOPG) and the wafer was peeled off, and the cellophane tape was pressed again on the peeled wafer and a part of it was peeled off to produce a thinner sheet. The operation of partially peeling off the obtained sheet with a cellophane tape was repeated several times, and then the HOPG sheet on the cellophane tape was rubbed against a sapphire substrate. When evaluated using an atomic force microscope (AFM), the thickness of the graphene 1 on the sapphire substrate was about 1±0.5 nm. This corresponds to the thickness of several layers of graphene. It has been confirmed by another method that the same result can be obtained even if the substrate is made of a material other than sapphire, as long as it has the strength to arrange the flak...

Embodiment 2）

[0083] In Example 2, the change of the interface resistance value in the case of changing the applied electrical bias (resistance change ratio R / R 0 )did an evaluation. In the same manner as in Example 1, a laminate of sapphire substrate 7 , graphene 1 , and iron oxide 2 to which an electrical bias was applied was produced.

[0084] When the magnitude of the applied pulse voltage is increased from 3.5V, Figure 8 Shown as the resistance change ratio R / R 0 The number of times Np of pulse application that changes rapidly decreases. On the other hand, this Np increases when the magnitude of the applied pulse voltage is made smaller from 3.5V.

[0085] This Np increases when the magnitude of the applied pulse voltage is fixed at 3.5 V and the pulse width is shortened from 1 μs, and decreases when it becomes longer. Thus, it was confirmed that the interface resistance value between graphene 1 / iron oxide 2 can be controlled and set by controlling the application conditions of th...

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Abstract

This production method includes: a first step for preparing multilayer graphene and ferromagnetic, Fe3O4-containing iron oxide contacting the graphene; and a second step for applying voltage or a current between the graphene and the iron oxide with the graphene side as the positive, oxidizing part of the graphene or part of the graphene and the Fe3O4, and forming a barrier layer configured from the oxidized graphene or the oxidized graphene and the Fe2O3 between the graphene and iron oxide, thereby providing graphene, iron oxide, and a barrier layer disposed at the interface of the graphene and the iron oxide, and forming a spin injection electrode capable of injecting spin from the iron oxide into the graphene via the barrier layer. This production method makes it possible to obtain a spin injection electrode capable of achieving highly efficient spin injection for graphene.

Description

technical field [0001] The present invention relates to a method of manufacturing a spin injection electrode. More specifically, the present invention relates to a method of manufacturing a spin injection electrode for injecting spin into graphene. Background technique [0002] The structure of substances made of carbon (C) is very diverse, not to mention diamonds, from sheets, nanotubes, horns, to balls like C60 fullerene. And its physical properties are more abundant than its shape. Such abundant changes in physical properties are promoting active research and development related to the application of the substance. In this substance, a single-layer or a few-layer carbon sheet film is called graphene. Graphene is a substance separated and extracted in 2004, and its specific physical properties as a two-dimensional semimetal have gradually been studied (Science, vol.306, pp.666-669 (2004)). For example, graphene shows high electron mobility more than 10 times that of si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/82C01B31/02H10N50/01
CPCH01L43/12H01F10/1936H01F41/205H01F41/30H10N50/01
Inventor 小田川明弘松川望
Owner PANASONIC CORP
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