Parasitic crosswise PNP triode and manufacturing method thereof in germanium-silicon heterojunction bipolar transistor (HBT) technology

Abstract

The invention discloses a parasitic crosswise PNP triode in a germanium-silicon heterojunction bipolar transistor (HBT) technology. A base region comprises a N trap which is formed at the bottom of shallow groove field oxygen, an emission region comprises a first P-type fake buried layer which is formed in the N trap, and a collector region comprises second P-type fake buried layers which are formed at the bottom of the shallow groove field oxygen and are arranged on the side face of the N trap. The N-type deep trap is arranged at the bottom of the shallow groove field oxygen, and the base region, the emission region and the collector region are all encircled by the N-type deep trap. N-type fake buried layers are connected with the base region through the N-type deep trap. An emitter, a collector and a base are all elicited in a contact mode through a deep hole formed in the top of each N-type fake buried layer. The invention further discloses a manufacturing method of the parasitic crosswise PNP triode in the germanium-silicon HBT technology. The parasitic crosswise PNP triode and the manufacturing method of the parasitic crosswise PNP triode in the germanium-silicon HBT technology can effectively reduce area of a device, is incapable of occupying the area of an active region, can reduce connecting resistance between the collector and a base end, and can remarkably improve frequency characteristics of the device under the condition that a current gain factor of the device is not influenced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a parasitic lateral PNP transistor in a silicon-germanium HBT process; the invention also relates to a method for manufacturing the parasitic lateral PNP transistor in a silicon-germanium HBT process. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its ap...

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Problems solved by technology

The parasitic lateral PNP device technology in the existing SiGe HBT is mature and reliable, but the main disadvantages are: epitaxial gr

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