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A phase change memory array and method of making the same

A manufacturing method and memory array technology, applied in the semiconductor field, can solve the problems of complex process and high cost, and achieve the effects of simple process, low cost and low substrate surface requirements

Inactive Publication Date: 2018-04-24
陈秋峰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the prior art, the manufacturing process of nanoscale phase change memory is complex and expensive

Method used

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  • A phase change memory array and method of making the same
  • A phase change memory array and method of making the same
  • A phase change memory array and method of making the same

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Embodiment Construction

[0087] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0088] refer to Figure 2 to Figure 21 As shown, a method for manufacturing a phase-change memory array disclosed by the present invention includes the following steps:

[0089] Such as figure 2 As shown, a P-type semiconductor substrate 1 is provided, and shallow isolation trenches 11 are formed at intervals on the P-type semiconductor substrate 1. The execution steps include forming a silicon oxide layer or a silicon nitride layer on the P-type semiconductor substrate 1, and performing optical The etching step includes opening the area of ​​the shallow isolation trench 11 by using an isolation mask, exposure, development, etc., and performing silicon etching by anisotropic dry etching to form the isolation trench 11 . The formation of the shallow isolation trenches 11 is a standard process, which will not be described in detail here. Em...

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Abstract

The invention discloses a phase-change memory array and a manufacturing method thereof. On the basis of a diode selection element array structure, a metal layer is formed on a tungsten plug corresponding to a position of a second P-type diffusion layer and on a contact point electrode of an N well; shallow A buffer layer, a dielectric layer, a low-temperature nitride and an insulating layer are sequentially formed on the insulating layer of the isolation trench; a phase-change memory material is formed on the tungsten plug above the N-type diffusion layer, and a metal layer is formed on the phase-change memory material; depositing metal After layering, P-type contact grooves and N-type contact grooves are formed, and P-type diffusion regions are buried around the P-type contact grooves and N-type contact grooves; above the P-type diffusion regions, bit lines connect several N-type contact grooves; On the bit line, the word line connects several P-type contact grooves to form a phase change memory array. The manufacturing method has simple process, lower requirements on the substrate surface, and saves manufacturing cost; the phase-change memory array obtained by the method has lower cost and better quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory array and a manufacturing method. Background technique [0002] Phase change random access memory has the characteristics of high read speed, low power, high capacity, high reliability, high write and erase times, low operating voltage / current and low cost. It is suitable for combining with CMOS technology and used as a higher density independent format or embedded memory applications. [0003] A phase change random access memory includes a storage node having a phase change layer, a transistor connected to the storage node, and a PN junction diode connected to the transistor. Depending on the voltage applied to it, the phase change layer changes from crystalline to amorphous, or vice versa. When the applied voltage is the set voltage, the phase change layer changes from an amorphous state to a crystalline state. When the applied voltage is the res...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L45/00
Inventor 陈秋峰王兴亚
Owner 陈秋峰