Manufacturing method of thin film capacitor

A technology for a film capacitor and a manufacturing method, which is applied in the directions of film/thick film capacitors, multilayer capacitors, etc., can solve the problems of increasing leakage current, inability to increase the capacity of film capacitors, and increasing annealing temperature.

Active Publication Date: 2013-06-19
LIYANG HUAJING ELECTRONICS MATERIAL
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  • Abstract
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Problems solved by technology

This perovskite-type oxide is obtained by annealing the precursor to crystallize it, and its dielectric constant can be increased by annealing at a high temperature. However, in order to increase the dielectric constant, the annealing temperature is sometimes increased, and the annealing time is sometimes extended When the manufacturing conditions are changed in this way, there is a problem that the capacity of the film capacitor cannot be increased and the leakage current increases.

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  • Manufacturing method of thin film capacitor

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Embodiment Construction

[0010] The present invention will be described in detail below through specific embodiments.

[0011] see figure 1 , the manufacturing method of the film capacitor that the present invention proposes comprises the following steps successively:

[0012] (1) Prepare raw materials with the following ratio: greater than or equal to 99.98% by weight of nickel ingot, 0.001-0.002% by weight of copper, 0.0005-0.0008% by weight of manganese, 0.005-0.008% by weight of aluminum, 0.0005-0.001% by weight of Chromium, 0.004-0.006% by weight iron, 0.0005-0.0012% by weight silicon and 0.001-0.002% by weight antimony and 0.001-0.002% by weight tantalum;

[0013] (2) After the above raw materials are melted, they are rolled into a foil, and then the foil is annealed to form a nickel substrate 1; the thickness of the nickel substrate 1 is 100-300 microns, preferably 200 microns.

[0014] (3) According to the tetragonal lead zirconate titanate PbZr 1-x Ti x o 3 Configure the molar ratio of l...

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Abstract

The invention discloses a manufacturing method of a thin film capacitor. The thin film capacitor is in a three structure which respectively are a nickel substrate, a dielectric layer and an electrode layer from bottom to top.

Description

technical field [0001] The invention relates to a method for manufacturing a capacitor, in particular to a method for manufacturing a large-capacity film capacitor. Background technique [0002] In conventional film capacitors, since the thickness of the dielectric layer is reduced, a material with a high dielectric constant is used for the dielectric layer in order to increase the capacitance density of the dielectric layer. As a material with a high dielectric constant, perovskite-type oxides are generally used conventionally. For example, lead zirconate titanate (PZT), lead lanthanum titanate (PLZT), lead magnesium niobate (PMN), barium strontium titanate (BST) and the like. This perovskite-type oxide is obtained by annealing the precursor to crystallize it, and its dielectric constant can be increased by annealing at a high temperature. However, in order to increase the dielectric constant, the annealing temperature is sometimes increased, and the annealing time is some...

Claims

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Application Information

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IPC IPC(8): H01G4/33
Inventor 钱时昌
Owner LIYANG HUAJING ELECTRONICS MATERIAL
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